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Substrate processing apparatus

A substrate and processing space technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problem of deterioration of substrate processing efficiency

Pending Publication Date: 2020-10-30
PSK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like figure 2 As explained in , impurities D introduced into the processing space 2112 are attached to the top side of the substrate W to deteriorate substrate processing efficiency

Method used

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  • Substrate processing apparatus
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Embodiment Construction

[0110] Hereinafter, embodiments of the disclosed concept will be described in detail with reference to the accompanying drawings, so that those skilled in the disclosed concept can easily implement the disclosed concept. However, the disclosed concepts can be implemented in a variety of different forms and are not limited to the embodiments described herein. Also, in describing the embodiments of the disclosed concept, detailed descriptions about well-known functions or configurations will be omitted when the aforementioned functions and configurations may make the subject matter of the disclosed concept unnecessarily obscure. In addition, components performing similar functions and operations are provided with the same reference numerals throughout the drawings of the specification.

[0111] The terms "comprising" and "comprising" in the specification are "open" expressions, that is, corresponding elements exist, and unless specifically stated to the contrary, do not exclude ...

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Abstract

The inventive concept relates to a substrate processing apparatus. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.

Description

technical field [0001] Embodiments of the disclosed concepts described herein relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for processing a substrate using plasma. Background technique [0002] Plasma refers to ionized gaseous species containing ions, free radicals, and electrons, and is produced by heating a neutral gas to extremely high temperatures or subjecting a neutral gas to strong electric or RF electromagnetic fields. The semiconductor device manufacturing process includes an ashing or etching process that uses plasma to remove a thin film on a substrate. The ashing or etching process is performed by allowing ions and radicals contained in plasma to collide or react with a film on a substrate. [0003] figure 1 A view illustrating a typical plasma processing apparatus. see figure 1 , the plasma processing apparatus 2000 has a processing unit 2100 and a plasma generating unit 2300 . [0004] The processin...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/32449H01J37/32458H01J37/32834H01J37/32715H01J37/32871H01L21/67167H01J37/3244H01L21/67069H01J2237/334H01J2237/022C23C16/4402C23C16/4401
Inventor 王泓胜
Owner PSK INC
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