Current detection circuit suitable for SiC MOSFET
A current detection circuit and current sampling technology, applied in the direction of measuring current/voltage, measuring current only, high-efficiency power electronic conversion, etc., can solve the problem that the influence of parasitic inductance cannot be ignored and is not very applicable, and achieves flexible design and avoids detection performance. effect, high reliability
Active Publication Date: 2020-11-03
XI AN JIAOTONG UNIV
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Problems solved by technology
However, although the Kelvin four-wire connection can avoid the influence of external parasitic inductance on current detection, the influence of internal parasitic inductance cannot be ignored, so it is not very suitable for high-power and high-frequency current detection, so it is necessary to develop a detection dialup, To avoid the influence of parasitic inductance on the detection performance of the current sampling resistor
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Embodiment 1
[0043]Before designing the current detection circuit, it is necessary to obtain the key parameter L through measurement S , the present invention also proposes a simple and accurate L S Test method, the test adopts double-pulse test, as shown in Figure 5a, it is obtained that L S The calculation formula is:
[0044]
[0045] Among them, T ring Is the natural oscillation period of the drain-source voltage, equal to t3 minus t1, C oss◎Vin is the output capacitance of Q2 when the input voltage is Vin, where ΔV DS and ΔV S V respectively DS and V S peak-to-peak value.
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Abstract
The invention discloses a current detection circuit suitable for a SiC MOSFET, and the circuit comprises a compensation resistor, a compensation inductor, a current sampling resistor, a total parasitic inductor, a voltage source, a first SiC MOSFET tube and a second SiC MOSFET tube, wherein the voltage source, the first SiC MOSFET tube, the second SiC MOSFET tube, the total parasitic inductor andthe current sampling resistor sequentially form a series loop, and the compensation resistor and the compensation capacitor form a compensation branch. The branch formed by the current sampling resistor and the total parasitic inductor is in parallel connection with the compensation branch. According to the detection circuit, the influence of the parasitic inductance on the detection performance of the current sampling resistor can be effectively avoided, the cost is relatively low, and the size is relatively small.
Description
technical field [0001] The invention relates to a current detection circuit, in particular to a current detection circuit suitable for SiC MOSFETs. Background technique [0002] Power semiconductor devices are key components of power electronic equipment. In 1957, General Electric Company of the United States developed the first thyristor, marking the birth of power electronics technology. Since the 1990s, with the continuous in-depth research and understanding of silicon carbide (SiC) materials and the gradual improvement of SiC epitaxy technology, power electronic devices based on SiC materials have been commercialized and gradually replaced some silicon carbide (SiC) materials. High temperature, high pressure, high efficiency, and small size applications where the device is not suitable. What follows is the detection of the switching performance of the SiC MOSFET. The method of detecting and observing the current using a current sampling resistor (CSR) is easy to design ...
Claims
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IPC IPC(8): G01R19/00
CPCG01R19/0092G01R19/16519G01R31/2621Y02B70/10G01R19/25
Inventor 王来利杨成子刘星烁李华清于龙洋
Owner XI AN JIAOTONG UNIV
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