Room-temperature thermal excitation spin polarization current source and implementation method thereof

A technology of spin polarization and current source, applied in the manufacture/processing of thermoelectric devices, thermoelectric devices using only Peltier or Seebeck effect, etc., can solve the problems of large device size, poor controllability, and demanding environmental temperature, etc. Achieve the effects of avoiding interference, strong topology stability, and strong topology protection

Active Publication Date: 2020-11-03
PEKING UNIV
View PDF16 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the problems existing in the above prior art, the present invention proposes a room temperature thermally excited spin-polarized current source and its implementation method, which solves the harsh environmental temperature requirements of the existing traditional electronically controlled spin-polarized current source technology , poor controllability, and large device size, achieving the goal of stable work at room temperature and convenient regulation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Room-temperature thermal excitation spin polarization current source and implementation method thereof
  • Room-temperature thermal excitation spin polarization current source and implementation method thereof
  • Room-temperature thermal excitation spin polarization current source and implementation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Such as figure 2 As shown, the room temperature thermally excited spin-polarized current source of this embodiment includes: a substrate, a topological semimetal, a pair of heating return electrodes, two spin detection electrodes, a gate, a control voltage source and a magnetic field; wherein, The substrate includes a conductive layer on the lower layer and an insulating dielectric layer on the upper layer; the topological semimetal is transferred above the insulating dielectric layer, the surface of the topological semimetal is flat and smooth, the shape is nanosheet, and the width of the topological semimetal is 1 μm to 10 μm ; Along the direction of the long side of the topological semimetal, a pair of heating loop electrodes are set at one end of the topological semimetal, and connected to a DC power supply through wires to form a heating loop HL, and two spin detectors are prepared along the length direction of the topological semimetal Electrodes, one spin detect...

Embodiment 2

[0061] Such as figure 2 (b) In this embodiment, along the length direction of the topological semimetal, there are a pair of heating circuit electrodes, magnetic metal electrodes and ordinary metal electrodes in sequence from right to left. The current heating effect leads to the high temperature region H at the right end of the topological semimetal, and the low temperature region C at the left end. Others are the same as embodiment one.

[0062] When the direction of electron diffusion is reversed, the direction of spin polarization will also be reversed; therefore, by changing the position of the heating device on the topological semimetal, the spatial position exchange between the high temperature region and the low temperature region is realized, that is, the direction of the temperature gradient is changed. The purpose of changing the direction of electron diffusion and spin polarization is achieved. Such as figure 1 As shown, the left end of Example 1 is the high-te...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Lengthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a room-temperature thermal excitation spin polarization current source and an implementation method thereof. According to the invention, a temperature gradient is introduced into topological semimetal, so that generation and monitoring of thermal excitation spin polarization current are realized; the thermal diffusion direction of electrons is changed by changing the position of a heating end, so that the spin polarization direction can be effectively regulated and controlled; the spin polarizability of electrons is adjusted by changing a gate voltage; the spin polarization current source can stably work to the room temperature, and the problem that a traditional spin polarization current source is low in working temperature is solved; the large-scale integration offuture spintronics devices is also facilitated by a nano-sized device structure and a simple and convenient preparation process; different from a traditional charge flow excitation spin current method, the thermal excitation spin polarization current source utilizes temperature difference to control heat flow, charge flow and spin current, heat generated in electronic component integration can berecycled, and the thermal excitation spin polarization current source is an environment-friendly device with low energy consumption and high efficiency.

Description

technical field [0001] The invention relates to the technology of a spin-polarized current source, in particular to a room-temperature thermally excited spin-polarized current source and a realization method thereof. Background technique [0002] Electrons have two degrees of freedom, charge and spin. Traditional electronic devices mainly use electric fields to control and use the charge characteristics of electrons, and do not consider spin. With the rapid development of microelectronics technology, the integration of semiconductor chips is getting higher and higher. Traditional electronic devices are facing two major problems. The quantum effect problem brought by the small size. In order to solve these problems, many new ideas and methods have been proposed, among which spintronics is the most promising one. Spintronics uses the spin degree of freedom of electrons to realize information calculation and storage. Compared with traditional electronic devices based on cha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L35/28H01L35/34
CPCH10N10/10H10N10/01
Inventor 廖志敏王安琦向鹏展
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap