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A vanadium dioxide crystal with good shape and strong crystallinity and its preparation and application

A technology with good crystallinity, applied in the direction of vanadium oxide, crystal growth, self-solid, etc., can solve problems such as difficulty in ensuring regular shape, low utilization rate of raw materials, harsh preparation conditions, etc. The effect of simple process

Active Publication Date: 2021-11-05
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the shortcomings and deficiencies of the existing technology, solve the current high-quality VO 2 The preparation of nanomaterials has problems such as harsh preparation conditions, low utilization rate of raw materials, difficulty in ensuring regular shape, and low repeatability. The primary purpose of the present invention is to provide a VO with good shape and strong crystallinity. 2 Crystal preparation method

Method used

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  • A vanadium dioxide crystal with good shape and strong crystallinity and its preparation and application
  • A vanadium dioxide crystal with good shape and strong crystallinity and its preparation and application
  • A vanadium dioxide crystal with good shape and strong crystallinity and its preparation and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Example 1: VO with good morphology and strong crystallinity 2 Crystal preparation

[0043] The process schematic diagram of preparation method among the present invention sees figure 1 .

[0044] Step (1): Weighing 0.045 parts by mass of V with a purity of 99.5% 2 o 5 powder, add 3 parts by volume of water, and stir for 48 hours at a speed of 1500 rpm on a magnetic stirrer to obtain 0.015 g / mL of V 2 o 5 Precursor solution.

[0045] Select a sapphire substrate, immerse it in alcohol, treat it ultrasonically for 30 minutes, repeat the above operation steps 3 times, and dry it.

[0046] Put V 2 o 5 Add the precursor solution into the small circular crucible, V 2 o 5 The ratio of the amount of precursor solution to the inner bottom area of ​​the container is 25 μL / cm 2 , heated and dried at a constant temperature of 80°C, a certain amount of V was obtained on the crucible 2 o 5 Powder precursors are used as evaporation sources.

[0047] Step (2): Put the sapp...

Embodiment 2

[0052] Example 2: VO with good morphology and strong crystallinity 2 Crystal preparation

[0053] Step (1): Weighing 0.045 parts by mass of V with a purity of 99.5% 2 o 5 powder, add 1.5 parts by volume of water, and stir for 48 hours at a speed of 1500 rpm on a magnetic stirrer to obtain 0.03 g / mL of V 2 o 5 Precursor solution.

[0054] Select a quartz substrate, immerse it in alcohol, treat it ultrasonically for 30 minutes, repeat the above operation steps 3 times, and dry it.

[0055] Put V 2 o 5 Add the precursor solution into the small circular crucible, V 2 o 5 The ratio of the amount of precursor solution to the inner bottom area of ​​the container is 15 μL / cm 2 , heated and dried at a constant temperature of 80°C, a certain amount of V was obtained on the crucible 2 o 5 Powder precursors are used as evaporation sources.

[0056] Step (2): Put the sapphire substrate in the V 2 o 5 On the small crucible of the precursor, the top surface of the small crucibl...

Embodiment 3

[0057] Example 3: VO with good morphology and strong crystallinity 2 Crystal preparation

[0058] Step (1): Weighing 0.045 parts by mass of V with a purity of 99.5% 2 o 5 powder, add 1 volume part of water, and stir for 48 hours at a speed of 1500 rpm on a magnetic stirrer to obtain 0.045 g / mL of V 2 o 5 Precursor solution.

[0059] Select a sapphire substrate, immerse it in alcohol, treat it ultrasonically for 30 minutes, repeat the above operation steps 3 times, and dry it.

[0060] Put V 2 o 5 Add the precursor solution into the small circular crucible, V 2 o 5 The ratio of the amount of precursor solution to the inner bottom area of ​​the container is 35 μL / cm 2 , heated and dried at a constant temperature of 80°C, a certain amount of V was obtained on the crucible 2 o 5 Powder precursors are used as evaporation sources.

[0061] Step (2): Put the sapphire substrate in the V 2 o 5 On the small crucible of the precursor, the top surface of the small crucible i...

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Abstract

The invention belongs to the technical field of crystal materials, and discloses a VO with good shape and strong crystallinity 2 Crystals and their preparation methods and applications. The present invention adopts an improved CVD method to prepare VO 2 crystal, specifically comprising the following steps: (1) V 2 o 5 The powder is dissolved in water to give V 2 o 5 Precursor solution, which is added to the vessel and dried to obtain V at the bottom of the vessel 2 o 5 Precursor, as an evaporation source; (2) place the substrate above the container, and then place the substrate and the 2 o 5 The container of the precursor is placed together in a heat treatment furnace, vacuumized, and heat treated to obtain VO with good morphology and strong crystallinity. 2 crystals. The preparation method of the present invention has the advantages of simple process, low temperature, high repeatability and high utilization rate of raw materials, and the prepared VO 2 Crystals have the advantages of good shape, smooth surface, strong crystallinity, good growth orientation, single phase, etc., and have good application prospects in the field of microelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of crystal materials, in particular to a vanadium dioxide (VO2) with good appearance and strong crystallinity. 2 ) crystal and its preparation method and application. Background technique [0002] Vanadium dioxide (VO 2 ) undergoes a transition from a monoclinic structure to a rutile phase structure at 68 °C, accompanied by sudden changes in many properties such as electricity, mechanics, magnetism and optics, and its unique metal-insulator phase transition (MIT) has broad application prospects . VO 2 Thin film materials have been a research hotspot for a long time. In recent years, electronic devices are developing towards the direction of miniaturization, which makes low-dimensional nanomaterials more and more important. [0003] Since Guiton et al. used chemical vapor deposition (CVD) to grow nanowires with regular shapes, people began to study one-dimensional single crystal VO 2 Research on nanomate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B1/02C01G31/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G31/02C30B1/02C30B29/16
Inventor 谢伟广曾文陈楠张宇靖赖浩杰
Owner JINAN UNIVERSITY