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Novel low-capacitance TVS structure and manufacturing method thereof

A manufacturing method and low-capacitance technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of high difficulty and high manufacturing cost, and achieve the effect of low manufacturing cost, low manufacturing cost, and low difficulty to achieve

Pending Publication Date: 2020-11-13
深圳市鸿泰微电子有限公司
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Problems solved by technology

Since it is very difficult to grow high-resistance epitaxy on a low-resistance substrate, it needs to be realized by some special means of suppressing substrate self-doping. higher cost

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  • Novel low-capacitance TVS structure and manufacturing method thereof
  • Novel low-capacitance TVS structure and manufacturing method thereof

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0030] see Figure 1 to Figure 2 , a novel low-capacitance TVS structure disclosed by the invention, comprising a high-resistance substrate 1, on which a first doped layer 2 is formed by a triple diffusion process, and located above the first doped layer 2 The high-resistance layer 3 has a thickness less than 100 um, and this thickness can effectively improve the control capability of subsequent production lines to obtain a good high-resistance layer 3 .

[0031] The high-resistance layer 3 is provided with several trench isolation structures 4, and the bottom ends of the trench isolation structur...

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Abstract

The invention is applicable to the technical field of semiconductors. The invention provides a novel low-capacitance TVS structure and a manufacturing method thereof. The novel low-capacitance TVS structure comprises a high-resistance substrate. A first doped layer and a high-resistance layer located above the first doped layer are formed on the high-resistance substrate through a triple diffusionprocess. The high-resistance layer is provided with a groove isolation structure, the groove isolation structure divides the high-resistance layer into a left channel, a middle channel and a right channel, the middle channel forms a second doped layer, a well region is formed in the right channel, and third doped layers are formed in the well region, the left channel and the middle channel. The high-resistance layer is formed in a triple diffusion process mode, the ultra-low capacitance TVS structure is obtained, compared with a high-resistance layer obtained through an epitaxial technology,the method is small in implementation difficulty and low in manufacturing cost, and the formed TVS structure has low capacitance and high surge performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a novel low-capacitance TVS structure and a manufacturing method thereof. Background technique [0002] At present, the integration level of electronic products is getting higher and higher, and the size is getting smaller and smaller, and the ability of functional modules to withstand surges, ESD and other impacts will become weaker. It has become an inevitable trend to add protection devices to related interfaces and circuits. Among them, in order to prevent data distortion, there are strict requirements on the capacitance of protective devices used for communication interface protection. Such protective devices generally require a capacitance of less than 1uA, and the higher the frequency of the communication interface, the smaller the capacitance is required. Low capacitance TVS (Transient Voltage Suppressor, transient suppression diode) is a protection dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/328
CPCH01L29/0603H01L29/0684H01L29/6609H01L29/861
Inventor 王洋施锦源
Owner 深圳市鸿泰微电子有限公司
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