Organic electroluminescent device for adjusting light-emitting wavelength based on negative thermal expansion effect of anti-perovskite material and preparation method thereof
An anti-perovskite, negative thermal expansion technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc. The effect of improving color purity
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Embodiment 1
[0027] Such as figure 1 As shown, the organic electroluminescent device provided in this embodiment based on the negative thermal expansion effect of the anti-perovskite structure material to adjust the luminous wavelength includes a glass substrate 1 coated with a semi-reflective conductive electrode layer 2, the The semi-reflective conductive electrode layer 2 is sequentially vapor-deposited with a hole injection layer 3 , a hole transport layer 4 doped with an inverse perovskite structure material, an electron transport layer and a light emitting layer 5 , and a metal electrode layer 6 from bottom to top.
[0028] The semi-reflective conductive electrode layer 2 adopts an Ag electrode with a thickness of 15 nm.
[0029] The hole injection layer adopts 3 MnO with a thickness of 10nm 3 .
[0030] The hole transport layer 4 of the doped anti-perovskite structure material adopts the doped anti-perovskite structure material Mn with a thickness of 50nm. 3 Zn 0.5 sn 0.5 N's N...
Embodiment 2
[0042] On the basis of Example 1, the difference between this Example and Example 1 is that the anti-perovskite structure material is replaced by Mn 3 (Zn 0.6 sn 0.4 )(N 0.85 C 0.15 ).
[0043]Under standard test conditions, when the electroluminescent device is placed at ordinary room temperature (about 25°C, at this time, the anti-perovskite material has no thermal expansion effect), the peak wavelength of the emission spectrum is 528nm. When the device is placed in an environment of 42°C and the thickness of the hole transport layer is reduced to 45nm, the peak wavelength of the emission spectrum is 482nm, and the blue shift is 48nm. When the device is placed in an environment of 15°C to expand the thickness of the hole transport layer to 55nm, the peak wavelength of the emission spectrum is 625nm, and the red shift is 97nm. The temperature controls the peak wavelength of the emission spectrum, thereby controlling the emission color.
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Abstract
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