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K-band CMOS high-efficiency radio frequency power amplifier circuit

A technology of amplifier circuit and radio frequency power, which is applied in the field of microelectronics and can solve problems such as increasing difficulty

Pending Publication Date: 2020-11-27
TIANJIN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, high substrate noise undoubtedly greatly increases the difficulty of the design

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  • K-band CMOS high-efficiency radio frequency power amplifier circuit

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with accompanying drawing.

[0013] A kind of K band CMOS efficient radio frequency power amplifier circuit (see figure 1 ), including an input matching circuit (1), a driver stage circuit (2), an interstage matching circuit (3), a power matching output circuit (4), wherein the signal source RFIN is connected to the input end of the input matching circuit, and the input matching The output end of the circuit is connected to the input end of the driving stage circuit, the input bias voltage VG1 is connected to the driving stage circuit, the output end of the driving stage circuit is connected to the input end of the interstage matching circuit, the output end of the interstage matching circuit is connected to the input end of the power matching output circuit, and the input bias The voltage VG2 is connected to the power matching output circuit, and the output end of the power matching output circuit is ...

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Abstract

The invention belongs to the technical field of microelectronics. The invention discloses a K-waveband CMOS high-efficiency radio frequency power amplifier circuit compatible with a standard CMOS process. The circuit is characterized in that the K-band CMOS high-efficiency radio frequency power amplifier circuit comprises an input matching circuit composed of a parallel resonance circuit and a series resonance circuit; a driving stage of a current multiplexing structure and a power matching output circuit are adopted, interstage matching of the series resonance circuit is adopted, and the power matching output circuit is provided with a negative feedback structure formed by connecting a resistor and a capacitor in series; the power matching output circuit not only can realize the effectsof power amplification and matching output, but also increases the output bandwidth, improves the circuit stability, and reduces the use of passive devices. The circuit has the advantages that the output power, the power additional efficiency and the power gain are improved, the power consumption is reduced, and the requirements of high data transmission rate, high integration level and low powerconsumption of the fifth-generation communication are met.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a K-band high-efficiency radio frequency power amplifier circuit compatible with a semiconductor integrated circuit and a standard CMOS process. Background technique [0002] The power amplifier is an important part of the transmitter in the wireless transceiver system, usually located in the back end of the transmitter of the communication system. The power amplifier is the main energy consumption module in the wireless transceiver system, how to realize the high-efficiency transmission of the power amplifier becomes very important. K-band (18-27GHz), including automotive radar applications (24GHz and 22-29GHz), ISM band (24GHz) and point-to-point communication (18-25GHz), is one of the most important frequency bands in modern wireless communication systems. With the rapid development of the fifth-generation communication technology, the traditional K-band power amplifier...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/56H03F3/193H03F3/24
CPCH03F1/565H03F3/245H03F3/193
Inventor 陈力颖王浩张思敏罗奎杨依林
Owner TIANJIN POLYTECHNIC UNIV