Image sensor pixel structure

Abstract

An image sensor pixel structure is suitable for obtaining a first frame of image and a second frame of image of a target scene in the same exposure process so as to fuse the first frame of image and the second frame of image into one frame of image. The pixel structure comprises a first charge storage circuit and a second charge storage circuit, the first charge storage circuit is coupled with thefloating diffusion node and is suitable for storing an exposure signal corresponding to the second frame image after exposure is finished; and the second charge storage circuit is coupled with the first source follower circuit and is suitable for storing an exposure signal and a reset signal corresponding to the first frame image after exposure is finished. By applying the scheme, the photosensitive sensitivity of the CMOS image sensor can be improved, and meanwhile, the CMOS image sensor has a relatively high dynamic range.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an image sensor pixel structure. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. [0003] Image sensors are classified into complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) image sensors and charge coupled device (Charge Coupled Device, CCD) image sensors. Among them, the CMOS image sensor has the advantages of simple process, easy integration of other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology, CMOS image sensors are increasingly used in various electronic products instead of CCD image sensors. [0004] In order to improve the dark light performance of the CMOS image sensor, it is necessary to increase the light sensitivity of the image sensor. [0005] However, although the exis...

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Problems solved by technology

[0005] However, although the existing CMOS image sensor has high photosensitive sensitivity, its dynamic range is small, which cannot meet the needs of high dynamic range applications under global exposure.

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