Insulated gate bipolar transistor and manufacturing method thereof

Abstract

The invention provides an insulated gate bipolar transistor and a manufacturing method thereof, and the method comprises the steps: forming a doped region in an exposed semiconductor substrate throughexecuting an ion implantation technology; a thermal oxidation process being executed, ions in the doped region being diffused to form a well region, a thermal oxidation material layer being formed onthe well region, and the thermal oxidation material layer comprising a first part and a second part; then, removing the part, far away from the field oxide layer, of the first part and the second part of the thermal oxide material layer to form a thermal oxide layer; and forming a polycrystalline silicon layer, wherein the polycrystalline silicon layer covers the thermal oxide layer and extends to cover the part, close to the thermal oxide layer, in the field oxide layer. The overall thickness between the polycrystalline silicon layer and the semiconductor substrate can be increased through the thermal oxidation layer, the transistor is prevented from being reversely broken down too early when reverse bias voltage is applied to the transistor, and reverse voltage resistance and high-temperature reliability of the transistor are improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an insulated gate bipolar transistor and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). Insulated gate bipolar transistors have the advantages of high input impedance and low conduction voltage drop, so insulated gate bipolar transistors are widely used as an important switching device in various switching circuit structures, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. For example, insulated gate bipolar transistors are used in circuit structures such as frequency converters and inverters. Among them, the high reverse withstand voltage of the insulated gate ...

AI Technical Summary

Problems solved by technology

With the wide application of insulated gate bipolar transistors, in order to meet the requirements of high reverse withstand voltage and the reliability of reverse withstand voltage at higher temperatures (automotive grade requires 175 ° C), the insulated gate bipolar Higher requirements are put forward for the performance of transistors to improve the withstand voltage and high temperature reliability of transistors. Therefore, the performance of existing insulated gate bipolar transistors needs to be improved

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