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A kind of method for preparing insei single crystal

A technology of single crystal and single substance, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of unfavorable InSeI crystal, difficult control of the reaction process, and easy introduction of impurities, so as to achieve good quality, avoid impurity elements from participating in the reaction, The effect of simplifying the reaction steps

Active Publication Date: 2021-07-13
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But above-mentioned method, flow process is complicated, and reaction process is difficult for controlling, all easily introduces impurity, is unfavorable for obtaining high-quality InSeI crystal

Method used

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  • A kind of method for preparing insei single crystal
  • A kind of method for preparing insei single crystal
  • A kind of method for preparing insei single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The quartz tube was washed with acetone and deionized water for 0.5 h and dried. The element molar ratio of In, Se, I is 1:1:1.02 In, Se, I 2 The three elements are put into a quartz tube and mixed evenly. Use a vacuum pump to evacuate the air from the quartz tube. And sintered with a mixed flame composed of hydrogen and oxygen to seal it. The quartz tube was then placed horizontally in a dual temperature zone tube furnace for heating. Set the high temperature zone to be heated to 550°C at 1°C / min, and the low temperature zone to be heated to 450°C at 1°C / min. After 8 days of incubation, the temperature is naturally lowered to room temperature, and InSeI crystals can be obtained from the low temperature end.

Embodiment 2

[0043] The quartz tube was washed with acetone and deionized water for 0.5 h and dried. The element molar ratio of In, Se, I is 1:1:1.02 In, Se, I 2The three elements are put into a quartz tube and mixed evenly. Use a vacuum pump to evacuate the air from the quartz tube. And sintered with a mixed flame composed of hydrogen and oxygen to seal it. The quartz tube was then placed horizontally in a dual temperature zone tube furnace for heating. Set the high temperature zone to be heated to 500°C at 1°C / min, and the low temperature zone to be heated to 400°C at 1°C / min. After 10 days of incubation, the temperature is naturally lowered to room temperature, and InSeI crystals can be obtained from the low temperature end.

Embodiment 3

[0045] The quartz tube was washed with acetone and deionized water for 0.5 h and dried. The element molar ratio of In, Se, I is 1:1:1.02 In, Se, I 2 The three elements are put into a quartz tube and mixed evenly. Use a vacuum pump to evacuate the air from the quartz tube. And sintered with a mixed flame composed of hydrogen and oxygen to seal it. The quartz tube was then placed horizontally in a dual temperature zone tube furnace for heating. Set the high temperature zone to be heated to 450°C at 1°C / min, and the low temperature zone to be heated to 350°C at 1°C / min. After 12 days of incubation, the temperature is naturally lowered to room temperature, and InSeI crystals can be obtained from the low temperature end.

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Abstract

The present invention relates to a method for preparing InSeI single crystal, comprising: (1) using elemental In, elemental Se and elemental I 2 As a raw material, put it on one end of the quartz tube after being evenly mixed and vacuumize it; The other end is placed in a low-temperature region, and finally cooled to room temperature after heat treatment to obtain the InSeI crystal.

Description

technical field [0001] The invention relates to a method for preparing an InSeI single crystal, in particular to a method for preparing an InSeI single crystal based on chemical vapor transport (CVT) and vacuum sealing technology, and belongs to the field of crystal preparation. Background technique [0002] In recent years, metal-based sulfur halides have been widely studied as important optoelectronic materials. For example, density functional theory studies have shown that BiSeI is a potential solar energy absorber and SbSeI can be used as a radiation detection material. As one of them, InSeI crystal also has important research value. [0003] However, the traditional preparation method of InSeI crystal includes: (1) Synthesize In first 2 Se 3 Crystal re-combined with InI 3 The reaction is obtained; (2) Synthesize In first 2 Bi 3 Se 7 I quaternary crystal, and then thermally decomposed to obtain InSeI crystal as a by-product. However, the above method has complicat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B25/00
CPCC30B25/00C30B29/12
Inventor 程国峰周玄尹晗迪阮音捷孙玥
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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