A spin-polarized coupled gan high electron mobility transistor

Abstract

The invention discloses a spin polarization coupled GaN high electron mobility transistor, which belongs to the field of ferromagnetic materials and the field of third-generation semiconductor microwave millimeter wave devices. The transistor includes a complete epitaxial structure of GaN HEMT, source-drain metal, source-drain protection SiN dielectric, primary gate metal magnetization film and secondary gate metal prepared on the complete epitaxial structure of GaN HEMT; the complete epitaxial structure of GaN HEMT includes: a lining Bottom, nucleation layer, high resistance buffer layer, channel layer and potential barrier layer; the primary gate metal magnetized film and the secondary gate metal together form the gate of the device from bottom to top. The invention adopts the magnetized film as the primary gate metal of the gate, and can realize the modulation of the electron spin direction of the two-dimensional electron gas through the spin polarization coupling of the magnetized film. At the same time, due to the action of the Schottky barrier, the concentration of the two-dimensional electron gas in the channel can be regulated.

Description

technical field [0001] The invention relates to a spin polarization coupled GaN high electron mobility transistor (High Electronic Mobility Transistor, HEMT), which belongs to the field of ferromagnetic materials and the field of third-generation semiconductor microwave and millimeter wave devices. Background technique [0002] The third-generation semiconductor GaN devices have larger band gaps and higher operating voltages, and have broad application prospects in the field of microwave and millimeter-wave chips. In general HEMT devices with AlGaN / GaN structure, due to the inverse piezoelectric effect of the AlGaN / GaN interface, there is a two-dimensional electron gas in the GaN channel, so the Schottky contact barrier formed by the gate of the device will affect the channel. The two-dimensional electron gas has a control function, that is, a voltage-controlled current device. Due to the modulation effect of the gate voltage on the channel current, HEMT devices are widely ...

AI Technical Summary

Problems solved by technology

In principle, the spin polarization coupling between the gate metal and the channel electrons is not realized, that is, the gate metal cannot simultaneously regulate the spin direction and channel current of the spin electrons.

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