Infrared detector and preparation method thereof
A technology of infrared detectors and nanopillars, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low efficiency of infrared detectors and difficulty in meeting the needs of deep infrared detection, and achieve bias electric field Uniform distribution, improved absorption efficiency, and improved extraction efficiency
Active Publication Date: 2020-12-11
深圳市奥伦德元器件有限公司
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Problems solved by technology
However, limited by materials and device structures, the efficiency of infrared detectors is relatively low, making it difficult to meet the needs of deep infrared detection
Method used
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preparation example Construction
[0030] In some specific embodiments of the present invention, the infrared detector and the preparation method thereof of the above-mentioned embodiments of the first aspect of the present invention are used. Include steps:
[0031] S201: Spin-coat photoresist, uniformly spin-coat a layer of photoresist on the infrared light incident surface on the Si-based infrared detector 102 with a spin coater;
[0032] S202: exposure, using a photolithography machine for exposure and development;
[0033] S203: Wet etching, using an etching solution to etch to obtain an array of Si nanopillars;
[0034] S204: cleaning, removing the photoresist, and cleaning the etching solution;
[0035] S205: Ge film preparation, using a coating machine to evaporate a Ge film on the Si nano-column array;
[0036] S206: Step annealing, including crystallization and infiltration;
[0037] S207: Evaporating electrodes: Evaporating electrodes on the back and front surfaces respectively, and performing al...
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Abstract
The invention discloses an infrared detector and a preparation method thereof. The infrared detector comprises a first electrode, a Si-based infrared detector, wherein the Si-based infrared detector is connected with the first electrode, a Si-GeSi-Ge nano column, wherein the Si-GeSi-Ge nano column is connected with the Si-based infrared detector, and a second electrode, wherein the second electrode is connected with the Si-GeSi-Ge nano column. The Ge shell layer has relatively strong metal properties and can form good interface contact with a metal electrode, so that the extraction efficiencyof photon-generated carriers of the device is improved, meanwhile, the whole external bias electric field can be distributed more uniformly, and the migration path of photon-generated carriers can beshortened. The Si-GeSi-Ge nano column can play a role of an antireflection film, and meanwhile, the quantum effect of the Si-GeSi-Ge nano column can help to improve the light absorption efficiency. Siand Ge can form a good heterojunction, and the light absorption efficiency is improved.
Description
technical field [0001] The invention relates to the field of sensor processing, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Si-based photodiodes (PDs) and avalanche photodiodes (APDs) have the advantages of low cost and relatively mature technology. They have been widely used in the field of infrared detection and are currently one of the mainstream infrared detectors. However, limited by materials and device structures, the efficiency of infrared detectors is relatively low, and it is difficult to meet the needs of deep infrared detection. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the present invention proposes an infrared detector and a preparation method thereof, which can improve the extraction efficiency of photogenerated carriers of the device, shorten the migration path of photogenerated carriers, and im...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L31/0232H01L31/0216H01L31/0224H01L31/0352H01L31/02H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCH01L31/109H01L31/1804H01L31/035227H01L31/022408H01L31/022416H01L31/02005H01L31/02161H01L31/02327B82Y30/00B82Y40/00Y02P70/50
Inventor 杨为家邱晨吴质朴何畏
Owner 深圳市奥伦德元器件有限公司