A kind of infrared detector and preparation method thereof
An infrared detector and infrared light technology, which is used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc. The effect of uniform distribution, shortened migration path and improved absorption efficiency
Active Publication Date: 2022-04-01
深圳市奥伦德元器件有限公司
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Problems solved by technology
However, limited by materials and device structures, the efficiency of infrared detectors is relatively low, making it difficult to meet the needs of deep infrared detection
Method used
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preparation example Construction
[0030] In some specific embodiments of the present invention, the infrared detector and the preparation method thereof of the above-mentioned embodiments of the first aspect of the present invention are used. Include steps:
[0031] S201: Spin-coat photoresist, uniformly spin-coat a layer of photoresist on the infrared light incident surface on the Si-based infrared detector 102 with a spin coater;
[0032] S202: exposure, using a photolithography machine for exposure and development;
[0033] S203: Wet etching, using an etching solution to etch to obtain an array of Si nanopillars;
[0034] S204: cleaning, removing the photoresist, and cleaning the etching solution;
[0035] S205: Ge film preparation, using a coating machine to evaporate a Ge film on the Si nano-column array;
[0036] S206: Step annealing, including crystallization and infiltration;
[0037] S207: Evaporating electrodes: Evaporating electrodes on the back and front surfaces respectively, and performing al...
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Abstract
The invention discloses an infrared detector and a preparation method thereof, comprising: a first electrode; a Si-based infrared detector connected to the first electrode; a Si-GeSi-Ge nanocolumn, described The Si-GeSi-Ge nano column is connected with the Si-based infrared detector; the second electrode is connected with the Si-GeSi-Ge nano column. The Ge shell layer has strong metallic properties, can form a good interface contact with the metal electrode, and improve the extraction efficiency of photogenerated carriers of the device; at the same time, the entire applied bias electric field can be distributed more uniformly , which is beneficial to shorten the migration path of photogenerated carriers. Si‑GeSi‑Ge nanopillars can act as an anti-reflection coating, and its quantum effect can help improve the absorption efficiency of light. Si and Ge can form a good heterojunction to improve the light absorption efficiency.
Description
technical field [0001] The invention relates to the field of sensor processing, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Si-based photodiodes (PDs) and avalanche photodiodes (APDs) have the advantages of low cost and relatively mature technology. They have been widely used in the field of infrared detection and are currently one of the mainstream infrared detectors. However, limited by materials and device structures, the efficiency of infrared detectors is relatively low, and it is difficult to meet the needs of deep infrared detection. Contents of the invention [0003] The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the present invention proposes an infrared detector and a preparation method thereof, which can improve the extraction efficiency of photogenerated carriers of the device, shorten the migration path of photogenerated carriers, and im...
Claims
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IPC IPC(8): H01L31/0232H01L31/0216H01L31/0224H01L31/0352H01L31/02H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCH01L31/109H01L31/1804H01L31/035227H01L31/022408H01L31/022416H01L31/02005H01L31/02161H01L31/02327B82Y30/00B82Y40/00Y02P70/50
Inventor 杨为家邱晨吴质朴何畏
Owner 深圳市奥伦德元器件有限公司