A driving method for asynchronously controlling gate signals to realize dynamic current sharing of parallel igbts

Abstract

The invention is a driving method for asynchronously controlling the gate signal to realize parallel IGBT dynamic current sharing, including determining the behavior model of the IGBT switching process control amount and control target, collecting the initial time delay of each branch IGBT switching process, and setting the average delay Time, adjust the pulse trigger timing of each branch, and the upper computer sends the set delay data to realize asynchronous gate trigger. The behavioral model of the delay on the switching process control is established to provide a reliable theoretical basis for the control method of adjusting the gate pulse to enhance the dynamic current sharing characteristics of the parallel IGBT, and to achieve a more detailed switching process adjustment. Collect and count the relevant data of IGBT time delay parameters and current differences in each branch, provide a benchmark reference for delay control, and achieve more effective gate control; realize dynamic current sharing characteristics from the perspective of gate delay control Adjustment, reduce the design and manufacturing costs of high-power hardware in the optimization of current sharing characteristics, and improve the flexibility of current sharing control.

Description

Technical field [0001] The present invention relates to the field of power electrons and power transmission, and more particularly to a driving method of asynchronous control gate signals to implement a parallel IGBT dynamic basification. Background technique [0002] With the continuous improvement of the current capacity of the modern berf, a single semiconductor device can not meet its needs, compared to the plurality of converters to achieve current expansion, the parallel application of switching devices has been widely used due to economic and feasibility. s concern. Due to the difference in control signal and drive loop parameters, the gate voltage between the parallel IGB is eliminated at its switch, which in turn affects the dynamic equalization of the collector current, so that IGBTs with high opening or current rise rates are in the opening process. A larger current, the IGBT with low-off or low-low rate is low in the shutdown process, with the accumulation of the junc...

AI Technical Summary

Problems solved by technology

[0012] This method is currently based on the power emitter voltage (v eE ) as the main criterion for detecting that the IGBT is in the turn-on and turn-off process, due to the v Ee In the opposite direction, there are requirements for the number or function of the corresponding detection circuit, and the IGBT short-circuit protection needs to be on v Ee and v CE Both are detected, and these detection circuits will further occupy the space of the adapter board

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