Horizontal liquid phase epitaxy graphite boat, growth system, epitaxy method and growth method
A technology of liquid phase epitaxy and graphite boat, which is applied in the field of liquid phase epitaxial growth of semiconductor single crystal thin films, can solve the problems of reducing the yield of mercury cadmium telluride thin films, and achieve the effects of reducing mercury cadmium telluride mother liquor, improving quality and increasing yield
Active Publication Date: 2021-04-13
北京智创芯源科技有限公司
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The mercury cadmium telluride mother liquor melted at high temperature flows everywhere in the graphite boat, eventually causing a part of the mercury cadmium telluride mother liquor to solidify on the surface of the mercury cadmium telluride film, reducing the yield of the mercury cadmium telluride film
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0038] From the description of the background technology, it can be seen that the HgCdTe material is mainly produced by liquid phase epitaxy technology, and the horizontal liquid phase epitaxy technology is one of the liquid phase epitaxy technologies. The horizontal liquid phase epitaxy technology will A certain proportion of HgCdTe raw material is completely melted at high temperature, so that the HgCdTe raw material becomes a liquid HgCdTe mother liquor, and then the temperature of the HgCdTe mother liquor is slowly cooled by controlling the cooling rate. The solubility in HgCdTe decreases as the temperature decreases. When the HgCdTe mother liquid reaches saturation, the HgCdTe mother liquid is in contact with the single crystal substrate and cooled to the crystallization point. A mercury cadmium telluride film with a thickness of several to ten microns is crystallized on the bottom surface.
[0039] In the horizontal liquid phase epitaxy technology, HgCdTe films with diff...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a horizontal liquid-phase epitaxial graphite boat, which comprises at least one scraping device, which can scrape off the mother liquor retained on the sliding bar when the sliding bar is pulled to a first preset position; and at least one absorbing device, When the slide bar is pulled to the second preset position, the absorbing device can absorb the mother liquor retained on the slide bar; preset position, and finally slide to the second preset position. The mercury cadmium telluride mother liquor grows a mercury cadmium telluride film on the substrate; pull the slide bar to the first preset position, and the scraping device scrapes off the mercury cadmium telluride mother liquor staying on the slide bar; then pull the slide bar to the second preset position. The position is set, and the absorbing device absorbs the mother liquor of mercury cadmium telluride; under the double action of the scraping device and the absorbing device, the residual mother liquor of mercury cadmium telluride is reduced, and the quality of the mercury cadmium telluride film is improved. The invention also discloses a horizontal liquid phase epitaxy growth system, an epitaxy method and a growth method.
Description
technical field [0001] The invention relates to the technical field of semiconductor single crystal thin film liquid phase epitaxial growth, in particular to a horizontal liquid phase epitaxial graphite boat, a growth system, an epitaxial method and a growth method. Background technique [0002] The HgCdTe material is a mixture of negative band gap HgTe and positive band gap CdTe, which is a direct band gap (HgTe) 1-x (CdTe) x Pseudo-binary compound material, by adjusting the composition x of the material, the photon wavelength corresponding to the band gap of HgCdTe can cover the entire infrared band, which is an ideal infrared detector material. [0003] At present, HgCdTe materials are prepared by various methods such as liquid phase epitaxy, metal organic vapor phase epitaxy and molecular beam epitaxy. Among them, the most mature technology and the best quality of grown thin film crystals are still liquid phase epitaxy technology. [0004] Horizontal liquid phase epita...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C30B19/06C30B19/00
CPCC30B19/00C30B19/063
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司