Transparent wafer film stress measurement system
A technology for measuring system and thin film stress, which is applied in measuring devices, measuring the change force of optical properties of materials when they are under stress, semiconductor/solid-state device testing/measurement, etc., to achieve the effect of improving accuracy and eliminating errors
Active Publication Date: 2020-12-15
无锡卓海科技股份有限公司
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Problems solved by technology
[0005] In response to the above problems and technical requirements, the inventors proposed a transparent wafer thin film stress measurement system, which automatically measures the surface curvature, film thickness, substrate thickness and other stress calculation parameters of the transparent wafer by using spectral confocal ranging technology, and Solve the application problem of spectral confocal distance measurement technology in the range and accuracy of stress measurement
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[0031] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0032] The application discloses a transparent wafer thin film stress measurement system, which uses spectral confocal distance measurement technology to realize the measurement of transparent wafer thin film stress. The measurement system includes a confocal distance measurement sensor 1, a sensor fixing table 2, a wafer fixing Station 3, sensor controller 4, control unit 5 and computer 6.
[0033] The confocal ranging sensor 1 of this application is implemented based on KEYENCE’s CL-P007 model, with a measurement range of 7mm±0.5mm and a linearity error of ±0.55um. It integrates optical path components such as diffraction lenses inside, and does not generate heat generation of components. and other instability issues. Spectral confocal ranging technology uses optical path components such as diffractive lenses to focus light of different w...
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The invention discloses a transparent wafer film stress measurement system, which relates to the technical field of semiconductors, and comprises a confocal distance measurement sensor, a sensor fixing table, a wafer fixing table, a sensor controller, a control unit and a computer, and is characterized in that the sensor fixing table drives the confocal distance measurement sensor to move along ahorizontal x direction and a z direction perpendicular to the wafer fixing table, the sensor controller is connected with the confocal distance measuring sensor, the control unit is connected with thesensor controller and the sensor fixing table, the control unit adjusts the displacement values of the sensor fixing table in the x direction and the z direction according to the distance values so as to complete measurement of the transparent wafer in one diameter direction, the distance value and the displacement value corresponding to the sensor fixing table are processed to obtain the substrate thickness and the substrate surface curvature of the transparent wafer before film coating and the film thickness and the film surface curvature of the transparent wafer after film coating, and thecomputer is connected with the control unit and used for calculating the stress data of the transparent wafer. According to the system, the accuracy of stress data is improved by utilizing a spectralconfocal distance measurement technology.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transparent wafer film stress measurement system. Background technique [0002] Thin film materials and technologies are widely used in various semiconductor processes. In the process of film preparation, due to the different thermal expansion coefficients of the film and the substrate, the internal stress of the film structure, etc., there are often stresses after the film grows, resulting in warpage of the substrate. Deformation and excessive stress will lead to film cracking and shedding. Wafer curvature will also affect lithography accuracy and automation operations, and even cause wafer fragments during transportation, causing equipment contamination and damage, and huge economic losses to manufacturers. Thin film stress measurement helps to adjust the film growth process in time, eliminate bad films and improve manufacturing efficiency. [0003] The traditional fi...
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Login to View More IPC IPC(8): G01L1/24G01B11/255G01B11/06H01L21/66
CPCG01B11/06G01B11/0625G01B11/255G01L1/24H01L22/12
Inventor 耿晓杨陈杨季建峰
Owner 无锡卓海科技股份有限公司