Resistance model modeling method

A resistance model and modeling method technology, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as inability to guarantee accuracy and spend a lot of time, saving resistance modeling time and improving accuracy , the effect of simple extraction process

Active Publication Date: 2020-12-15
南京华大九天科技有限公司
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to improve the accuracy of the resistance model, complex formulas will be introduced in rsh and vc2, but these formulas cannot guarantee the accuracy under all W and L
Complex formulas often contain a large number of parameters, and the extraction of these parameters takes a lot of time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance model modeling method
  • Resistance model modeling method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0039] figure 1 For the flow chart of the resistance model modeling method according to the present invention, reference will be made below figure 1 , the resistance model modeling method of the present invention is described in detail.

[0040] First, in step 101, a matrix resistance test piece (Testkey) is designed according to GDR (Graphical Design Rules) requirements.

[0041] Preferably, the size of the resistors is distributed in a matrix, the size distribution is complete, and there is no vacancy in the middle. Testkey dimensions cover the maximum and minimum W / L values ​​specified in the GDR.

[0042] figure 2 It is a schematic diagram of a resistance t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a resistance model modeling method, wherein the method comprises the following steps: 1) designing a matrix type resistance test piece according to a graphic design rule, andforming a resistance box model by adjacent four resistance sizes; 2) measuring a current and voltage characteristic curve of the matrix resistance test piece; 3) extracting model parameters of each size resistor according to a measurement result; 4) calculating the model parameters of each resistance box model according to the resistance model parameters; 5) synthesizing the model parameters of the resistance box models; and 6) extracting the temperature coefficient based on high and low temperature data. The resistance model modeling method provided by the invention can improve the model accuracy and save the modeling time.

Description

technical field [0001] The invention relates to the technical field of semiconductor design, in particular to a SPICE modeling method. Background technique [0002] Resistors are one of the important semiconductor passive devices, and circuit designers usually need to use resistors for circuit design. The accuracy of the resistance model will directly affect the accuracy of the circuit simulation, thereby affecting the results of the circuit tape-out. The current resistance model architecture is mainly: [0003] R=rsh*Tcoef*Vcoef (1) [0004] In the formula (1), R represents the resistance value, rsh represents the resistance value near normal temperature and voltage 0V, Tcoef represents the temperature coefficient, and Vcoef represents the voltage coefficient. rsh is usually a function of resistor width (W) and resistor length (L), and the common form of Tcoef is: [0005] Tcoef=1+(temper-25)*tc1+(temper-25)*(temper-25)*tc2 (2) [0006] In formula (2), temper represent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/367G06F119/08
CPCG06F30/367G06F2119/08
Inventor 傅飞
Owner 南京华大九天科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap