Broadband high-gain flatness radio frequency/millimeter wave power amplifier

Abstract

The invention discloses a broadband high-gain flatness radio frequency / millimeter wave power amplifier which is of a three-level structure and comprises a first-level stage 1 circuit, a second-level stage 2 circuit and an output-level stage 3 circuit which are connected in sequence, the frequency response of the first-level stage 1 circuit is in-band monotone increasing arrangement, and the first-level stage 1 circuit comprises a current multiplexing common source level composed of a transistor M1 and a transistor M2; the second-stage stage stage 2 circuit comprises a common source stage composed of a transistor M3, the output-stage stage stage 3 circuit comprises a common source stage composed of a transistor M4, and the frequency response of the second-stage stage stage 2 circuit and thefrequency response of the output-stage stage stage 3 circuit are set in an in-band monotonically decreasing mode. The multi-stage tuning technology is adopted, the high-frequency gain is increased through the gate inductance peak technology, the better in-band gain flatness is achieved, and the gain loss caused by introduction of a feedback loop is avoided.

Description

Technical field[0001]The invention belongs to the technical field of radio frequency / millimeter wave integrated circuit design, and specifically relates to a broadband high gain flatness radio frequency / millimeter wave power amplifier.Background technique[0002]As a key module in the RF / millimeter wave field, the power amplifier is the module with the largest power consumption in the RF transmitter. Its performance directly determines the performance of the transmitter. The theoretical peak transmission rate of the fifth-generation mobile communication network (5G) can reach 10Gbs per second, which is hundreds of times faster than the fourth-generation mobile communication network (4G). In addition to requiring new signal modulation methods, it also has more carrier bandwidth. High demands. Secondly, the in-band gain flatness of the transmitter is very important for reducing Inter-Symbol Interference (ISI) and reducing the bit error rate.[0003]There are some design methods for broadb...

AI Technical Summary

Problems solved by technology

There are many problems in the traditional method of achieving high gain flatness, such as low gain flatness, complex design, at the cost of reduced gain, etc.

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