High-quality aluminum alloy for semiconductor and preparation method of high-quality aluminum alloy

A high-quality, semi-conductive technology, applied in the field of non-ferrous metal pressure processing, can solve the problems of insufficient crushing of the coarse second phase, coarse grains, uneven structure, etc., and achieve remarkable grain refinement effect, good strong plasticity level, strong The effect of a higher level of plasticity

Inactive Publication Date: 2020-12-22
宁波锦越新材料有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention designs a high-quality aluminum alloy for semiconductors and its preparation method, which solves the technical problems of the current Al-Mg-Si alloy products for semiconductors, such as coarse grains, uneven structure, and broken coarse second phases Insufficient, loose pores, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The composition of high-quality aluminum alloys for semiconductors is 0.6%Si, 0.3%Cu, 0.15%Mn, 1.3%Mg, 0.28%Zn, 0.15%Ti, 0.15%Cr, 0.05%Zr, 0.05%RE, Fe<0.5%, The balance is Al for selection.

[0039] Semi-continuous casting was used to obtain ingots φ305×720mm; the ingots were subjected to soaking treatment in a six-channel circulating air resistance heating furnace, and the soaking system was 540°C×18h + 570°C×24h, and air-cooled to room temperature; the soaked ingots were The ingot is turned and processed to φ280×720mm; before forging, the processed ingot is immersed in a liquid nitrogen cryogenic box for 70 minutes to ensure that the temperature of the ingot after cryogenic treatment is kept below -150°C; the ingot is forged twice and finished forging. It is carried out on a 2000t hydraulic press. The first forging deformation process is as follows:

[0040] φ280×720→φ361×432 → 269×610

[0041]The first forging is completed, the billet is annealed, kept at 410°C fo...

Embodiment 2

[0048] The composition of high-quality aluminum alloys for semiconductors is 0.6%Si, 0.3%Cu, 0.15%Mn, 1.3%Mg, 0.28%Zn, 0.15%Ti, 0.15%Cr, 0.05%Zr, 0.05%RE, Fe<0.5%, The balance is Al for selection.

[0049] Semi-continuous casting was used to obtain ingots of φ380×720mm; the ingots were soaked in a six-channel circulating air resistance heating furnace, and the soaking system was 540°C×24h + 570°C×24h, and air-cooled to room temperature; the soaked ingots were The ingot is turned and processed to φ360×720mm; before forging, the processed ingot is immersed in a liquid nitrogen cryogenic box for 90 minutes to ensure that the temperature of the ingot after cryogenic treatment is kept below -150°C; the ingot is forged twice and finished forging. It is carried out on a 2000t hydraulic press. The first forging deformation process is as follows:

[0050] Φ360×720→Φ455×450→□341×630

[0051] The first forging is completed, the billet is annealed, kept at 410°C for 95 minutes, and the...

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PUM

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Abstract

The invention relates to a preparation method of a high-quality aluminum alloy for a semiconductor. The preparation method comprises the following steps of: step 1, obtaining an aluminum alloy cast ingot by adopting a semi-continuous casting process; 2, homogenizing the aluminum alloy cast ingot by adopting a multi-stage homogenizing heat treatment process; 3, carrying out cryogenic treatment on the homogenized aluminum alloy cast ingot; 4, after the cryogenic treatment, subjecting the aluminum alloy cast ingot to low-forging-frequency, high-forging-ratio and intermediate stress relief annealing iterative forging; and 5, sequentially carrying out high-temperature short-time solid solution treatment, finishing and low-temperature long-time aging treatment on the forged piece obtained in thestep 4 to obtain the high-quality aluminum alloy for the semiconductor. By means of the method, dynamic recovery, dynamic recrystallization and sub-dynamic recrystallization of an alloy structure inthe forging deformation process are well restrained, the grain refinement effect on the structure is remarkable, the performance is excellent, the plasticity level is better, and the machining performance is excellent.

Description

technical field [0001] The invention relates to the technical field of pressure processing of nonferrous metals, in particular to a high-quality aluminum alloy for semiconductors and a preparation method thereof. Background technique [0002] The invention relates to a high-quality aluminum alloy for semiconductors belonging to the Al-Mg-Si series alloy. Due to its good processing performance, excellent welding performance and corrosion resistance performance, this series of alloys is widely used in aerospace, rail transit, automobile industry, electronic information and other fields have been widely used. [0003] High-quality aluminum alloy refers to an aluminum alloy with no metallurgical defects, fine and uniform alloy structure, and good performance. With the rapid improvement of the comprehensive technology level of the semiconductor industry, the demand for high-quality aluminum alloys has increased rapidly. However, the same type of domestic aluminum alloy products ...

Claims

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Application Information

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IPC IPC(8): C22C21/08C22F1/047C21D1/30
CPCC21D1/30C22C21/08C22F1/047
Inventor 张瑾张飞叶翔周建波
Owner 宁波锦越新材料有限公司
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