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Boost converter in memory chip

A boost converter and memory controller technology, applied in static memory, read-only memory, information storage, etc., can solve the problem that high voltage cannot be obtained

Pending Publication Date: 2020-12-25
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Typically, such high voltages cannot be obtained directly from a power source such as an external power supply with a voltage range between 1 volts and 5 volts

Method used

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Embodiment Construction

[0016]The following discussion relates to various embodiments of the invention. Although one or more of these embodiments may be preferred, the disclosed embodiments should not be interpreted or otherwise used to limit the scope of the present disclosure, including the claims. In addition, those skilled in the art will understand that the following description has a wide range of applications, and the discussion of any embodiment is only intended as an example of the embodiment, and is not intended to imply that the scope of the present disclosure (including claims) is The implementation.

[0017]Various terms are used to refer to specific system components. Different companies may refer to components with different names—this document does not intend to distinguish between components with different names but the same function. In the following discussion and claims, the terms "including" and "comprising" are used in an open-ended manner, and therefore should be understood to mean "inc...

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PUM

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Abstract

Boost converter in memory chip. A non-volatile memory including an in-chip boost converter includes: a first memory structure defines control circuitry disposed on a first substrate, and a first metallayers disposed adjacent the control circuitry, where the first metal layer couples elements of the control circuitry; and a second memory structure defines a memory array disposed on a second substrate, and a second metal layer disposed adjacent the memory array, where the first and second metal layers are bonded together by a permanent physical bond formed between the first and second metal layers; and a boost converter defining an inductor disposed in the first and second metal layers, and a transistor circuit disposed in the control circuitry. The non-volatile memory, where the inductor further defines a first terminal coupled to a voltage source, and a second terminal coupled to a load by way of a transistor circuit.

Description

Background technique[0001]The non-volatile memory system retains the stored information without the need for external power. One type of non-volatile memory commonly used in various computing devices and independent storage devices is flash memory. For example, flash memory may exist in laptop computers, digital audio players, digital cameras, smart phones, video games, scientific instruments, industrial robots, medical electronics, solid state drives, and USB drives.[0002]During flash memory operations, high voltages (such as 30 volts) are used for operations such as erasing and programming. Generally, such high voltage cannot be obtained directly from a power source (such as an external power source with a voltage range of 1V-5V). Instead, the high voltage is generated by a circuit embedded in the flash memory, which is configured to generate a high voltage from a power source. Exemplary circuits include embedded voltage conversion circuits and charge pump circuits.Summary of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11573H01L27/1157H01L23/522H10B43/40H10B43/35
CPCH01L23/5227H10B43/40H10B43/35G11C16/30G11C5/145H01L25/18H01L25/50H01L24/08H01L2224/80895H01L2224/80896H01L28/10H01L2224/80357H01L2224/08145H10B41/27H10B43/27H01L2924/00014H01L23/645
Inventor H.齐布冯戈泽西川昌利
Owner SANDISK TECH LLC