Simulation method and simulation system for photoetching pattern

Abstract

The invention provides a simulation method and a simulation system for a photoetching pattern. The simulation method comprises the following steps: presetting a substrate thickness parameter, a photoresist layer thickness parameter and a mask plate; according to the thickness parameter of the substrate, the thickness parameter of the photoresist layer and the mask plate, simulating incident lightto irradiate the photoresist layer, reflecting the incident light through the substrate to form reflected light, and forming standing waves by the reflected light and the incident light; adjusting a preset parameter to adjust the positions of the wave crest and the wave trough of the standing wave; simulating development processing to obtain the photoetching pattern; judging whether the wave crestof the standing wave is located at the bottom of the photoetching pattern and / or judging whether the reflectivity of the substrate is smaller than a threshold value or not; if yes, the adjusted preset parameters are used in an experiment; if not, the preset parameters are adjusted again. According to the simulation method of the photoetching pattern, the manufacturing process of the photoetchingpattern can be simulated, and the problem that the photoetching pattern is unstable is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a simulation method and simulation system for photolithographic patterns. Background technique [0002] The photolithography process in semiconductor manufacturing technology is the process of transferring the pre-made pattern on the mask to the wafer by spin-coating photoresist on the wafer surface, exposing and developing. Then the wafer with the photoresist pattern is sent to the etching or ion implantation equipment to perform ion implantation or doping on the area not covered by the photoresist to form the required doping concentration or structure. Therefore, the accuracy of the pattern defined by the photoresist will directly affect the quality of ion implantation and etching. In the existing technology, with the development of semiconductor process technology, the line width is getting smaller and smaller. After exposure and development, the lithographic pattern f...

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Problems solved by technology

[0003] In view of the above-mentioned defects in the prior art, the present invention proposes a simulation method and simulation system for photolithography graphics, which solves the problem that photolithography graphics are easy to collapse through simulation experiments, and reduces the investment in actual production

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