Sb compound-based medium-short wave double-color infrared detector and preparation method thereof
An infrared detector, short-wave infrared technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increasing the complexity of component adjustment, limited improvement effect, and reduced repeatability, etc., to achieve improved Anti-interference and detection effect, simple structure, strong repeatability effect
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[0044] Such as figure 1 , figure 2 As shown, a Sb compound-based medium-short-wave dual-color infrared detector structure from top to bottom is GaSb substrate-1, Te-doped N-type GaSb buffer layer-2, mid-wave infrared InAs / GaSb superlattice N-type Layer-3, mid-wave infrared InAs / GaSb superlattice unintentionally doped absorbing layer-4, mid-wave infrared InAs / GaSb superlattice P-type layer-5, short-wave infrared GaSb bulk material P-type layer-6, short-wave infrared Unintentionally doped absorbing layer of GaSb bulk material—7, N-type layer of short-wave infrared GaSb bulk material—8, sulfide layer—9 and SiO2 passivation layer—10 on the side wall of the step, upper mesa of the step and lower mesa of the step, and The mesa is provided with a metal upper electrode-12 and a light hole-13, wherein the metal upper electrode-12 is in contact with the short-wave infrared GaSb bulk material N-type layer-8, and the lower mesa of the steps is provided with a metal lower electrode-11 an...
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