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Short-wave two-color infrared detector and preparation method thereof

An infrared detector, short-wave infrared technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of increasing the cost of the detection system, difficult to achieve miniaturization of equipment, etc., and achieve accurate control of growth accuracy, excess Small noise factor and good uniformity

Active Publication Date: 2022-03-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing detection system only splices devices with different functions together, which makes it difficult to miniaturize the equipment and increases the cost of the detection system

Method used

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  • Short-wave two-color infrared detector and preparation method thereof
  • Short-wave two-color infrared detector and preparation method thereof

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts fall within the protection scope of the present invention.

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention; the terms "upper", "low...

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Abstract

The invention provides a short-wave two-color infrared detector, which comprises a substrate, a buffer layer formed on the surface of the substrate, a short-wave infrared unit, a first P-type layer, a short-wave absorption layer and a first N-type layer, the first P-type layer, the short-wave absorption layer and the first N-type layer are sequentially stacked on the surface of the buffer layer, the first N-type layer is formed on the surface of the substrate, and the first N-type layer is formed on the surface of the buffer layer. The first P-type layer, the short wave absorption layer and the first N-type layer are made of at least one of AlInAsSb and InGaAsSb quaternary alloy materials, and the avalanche multiplication unit comprises a second N-type layer, an avalanche multiplication layer and a second P-type layer which are sequentially stacked on the surface of the first N-type layer, materials of the second N-type layer, the avalanche multiplication layer and the second P-type layer comprise materials of which the ratio of a material hole ionization coefficient to a material electron ionization coefficient is smaller than a preset value. According to the invention, a PINNIP type back-to-back double-diode structure is adopted, and functions of short-wavelength infrared light detection and distance measurement can be realized through bias polarity modulation.

Description

technical field [0001] The invention belongs to the field of infrared photoelectric materials and devices, and in particular relates to a short-wave two-color infrared detector and a preparation method thereof. Background technique [0002] Short-wave infrared detectors are widely used in the military and civilian fields. In the military field, people can perform high-resolution observation and identification in close to dark or completely dark conditions, and implement target acquisition, surveillance and tracking; in the civilian field, such as unmanned Driving, drones and security monitoring also play an extremely important role. The short-wave infrared detection mode is divided into two modes: active and passive. The active mode uses the laser and the detector as the core optoelectronic device for ranging, communication, etc., and the passive mode uses the detector as the core optoelectronic device for night vision. In practical applications, the active and passive mode...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/107H01L31/0304H01L31/18
CPCH01L31/105H01L31/107H01L31/03046H01L31/1844Y02P70/50
Inventor 周文广牛智川徐应强王国伟蒋洞微吴东海蒋俊锴常发冉李农林芳祁崔素宁陈伟强
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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