A semiconductor drive circuit

Abstract

The present invention provides a semiconductor drive circuit, the signal processing module is used to convert the PWM signal of any frequency into a first high-frequency signal and a second high-frequency signal; an isolation transformer is used to convert the first high-frequency signal and the second high-frequency signal The high-frequency signal is converted into a third high-frequency signal; the rectification module is used to convert the third high-frequency signal into positive voltage and negative voltage; the push-pull module is used to convert the third high-frequency signal into a gate drive signal to drive the IGBT module; the detection module is used to detect the fault information of the IGBT module; the isolation transformer is also used to transmit the fault information to the fault processing module to output a corresponding fault signal. That is to say, the semiconductor driving circuit achieves the purpose of transmitting the three signals of the power supply signal, the PWM signal and the fault signal through an isolation transformer, which greatly simplifies the circuit structure and reduces the circuit cost.

Description

technical field [0001] The present invention relates to the technical field of integrated circuit design, and more specifically, relates to a semiconductor driving circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is one of the typical circuits of HVIC (High Voltage IC, high voltage integrated circuit). Due to its high reliability, small area and high effect, it is widely used in household appliances and industries. Equipment, aviation, aerospace, weapon systems, etc. [0003] However, at present, the semiconductor drive circuit of the IGBT module needs to be isolated by transformers on the two circuits of signal transmission and power transmission, usually more than two isolation transformers are required, resulting in a large number of isolation transformers, and, due to safety regulations Requirements, the isolation transformer needs high insulation performance and large creepage distance, which makes the d...

AI Technical Summary

Problems solved by technology

[0003] However, at present, the semiconductor drive circuit of the IGBT module needs to be isolated by transformers on the two circuits of signal transmission and power transmission, usually more than two isolation transformers are required, resulting in a large number of isolation transformers, and, due to safety regulations Requirements, the isolation transformer needs high insulation performance and large creepage distance, which makes the design of the isolation transformer complicated, and its own cost is high, which eventually leads to a complex circuit structure and high cost

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