Miniaturized radio frequency coaxial structure based on silicon-based MEMS technology and manufacturing method

Abstract

The invention belongs to the technical field of microwave electronic products, and particularly relates to a miniaturized radio frequency coaxial structure based on silicon-based MEMS technology , which comprises a silicon-based wafer body, a TSV signal hole is formed in the middle of the silicon-based wafer body, a TSV grounding hole is formed in the periphery of the silicon-based wafer body, anda slotted hole is further formed in the silicon-based wafer body. On the basis of the existing silicon-based process, the miniaturization design of the radio frequency vertical transition structure is realized by utilizing a silicon-based through cavity processing process. The TSV signal holes are used as the inner conductors of the coaxial line structure, the four TSV grounding holes are used asthe outer conductors of the coaxial line structure, and the filling material in the coaxial line is the silicon medium and the air in the four fan-shaped structures. According to the structure, a cavity is dug in the coaxial structure, that is to say, a part of silicon medium is replaced with air medium, the average dielectric constant is reduced, the radius of the silicon wafer is reduced underthe condition that the characteristic impedance of the coaxial line is kept unchanged, and the structural size of the silicon wafer is reduced.

Description

technical field [0001] The application belongs to the technical field of microwave electronic products, and in particular relates to a miniaturized radio frequency coaxial structure and a manufacturing method based on silicon-based MEMS technology. Background technique [0002] In recent years, silicon-based MEMS technology, as an emerging technology, has been widely used in device manufacturing and device packaging in the radio frequency field. Its main features are high integration, miniaturization, and three-dimensional stacking of silicon chips. Among them, the three-dimensional stacking of silicon chips needs to solve the transmission problem of radio frequency signals in the vertical direction. The traditional vertical interconnection method is to use through-silicon via (TSV, through-silicon vias) technology to form a coaxial structure to realize radio frequency transmission. The transmission structure is as follows: figure 1 As shown, its size is determined by the f...

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Problems solved by technology

However, the development of TSV technology with a larger depth-to-diameter ratio requires a large amount of research and development funds and the purchase of new silicon wafer processing machinery, which has a long research and development cycle and high costs.

[0009] The second method is to develop silicon wafers with a smaller dielectric constant. The relative dielectric constant of silicon wafers is 11.9. Only by doping can the dielectric constant be changed. This method is expensive to develop and the material after doping Changes in properties may cause problems such as different dielectric constants at different positions or increased loss tangents

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