Preparation method of heterojunction photodetector and photodetector

Abstract

The invention discloses a preparation method of a heterojunction photodetector and the photodetector. The preparation method comprises the steps of: setting a mask on a first material layer after graphical processing, and enabling the mask to cover the surface, except a heterojunction region, of the first material layer; and then setting a second material layer on a substrate, and stacking the second material layer with the first material layer in the heterojunction region. Therefore, the setting method of the second material layer on the substrate is more flexible, the stacking of the two materials by organic matter-assisted stripping and transferring in the prior art is avoided, and when the second material layer is subjected to graphical processing, the mask protects the first materiallayer, so that the preparation method of the heterojunction photodetector provided by the invention can realize the flexibility and the scale of the preparation of the low-dimensional material heterojunction, the preparation of the heterojunction is compatible with the CMOS process, and the threshold and the cost of the industrial preparation of the heterojunction are reduced.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a preparation method of a heterojunction photodetector and the photodetector. Background technique [0002] Low-dimensional materials have become an important support for the development of a new generation of high-performance optoelectronic devices due to their outstanding optoelectronic properties, ultra-high carrier mobility, and excellent mechanical strength. They have application potential that cannot be achieved by traditional bulk materials. However, a single low-dimensional material still cannot meet the needs of multifunctional devices in practical applications. Therefore, the idea of ​​assembling different low-dimensional materials into van der Waals heterostructures to further improve device performance has emerged as the times require. Compared with traditional semiconductor heterojunctions, van der Waals heterojunctions are no longer limited by the...

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Problems solved by technology

Therefore, the detector based on this mechanism cannot perform detection under zero bias voltage, and the dark current of the detector is not small, and the minimum detectable power (sensitivity) is large, which cannot guarantee high-end communications such as lidar, quantum communication, and atmospheric optical communication. Backhaul small signal detection in the link and other high-precision detection requirements

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