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A superluminescent light-emitting diode and its manufacturing method

A technology of superluminescence and manufacturing method, applied in the field of superluminescence light emitting diode and its manufacture, can solve the problems of high difficulty of polarization of light source of superluminescence light source and quantum well process control, and achieves reduction of current leakage, reduction of reflection, reduction of The effect of polarization extinction ratio

Active Publication Date: 2021-08-24
武汉敏芯半导体股份有限公司
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Problems solved by technology

[0004] The technical problem solved by the present invention is to provide a superluminescent light-emitting diode and its manufacturing method, which solves the problem of high difficulty in controlling the quantum well process of epitaxial growth of different components and the polarization of the superluminescent light-emitting diode light source

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  • A superluminescent light-emitting diode and its manufacturing method
  • A superluminescent light-emitting diode and its manufacturing method
  • A superluminescent light-emitting diode and its manufacturing method

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[0028] The present invention will be further described below in conjunction with accompanying drawing:

[0029] The present invention grows two kinds of MQW multi-quantum wells with different energy band gaps as the active layer by adopting the method of butt-butt growth, which can well control the quality of epitaxial growth, and will not be affected by the lattice constant between the quantum wells in the active layer. The difference introduces additional strain and affects the polarization extinction ratio and the reliability of the diode; by setting the heterojunction buried structure on both sides of the active region, in addition to confining the optical field in the buried active region, it can also grow reverse P The / N junction reduces current leakage; and by setting metal layers in the trenches on both sides of the active region, additional strain is introduced to the active region, thereby adjusting the stress distribution in the active region to achieve TE / TM mode m...

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Abstract

The invention discloses a superluminescent light-emitting diode and a manufacturing method thereof. The method comprises the following steps: sequentially epitaxially growing a lower optical confinement layer, a first MQW multi-quantum well layer and an upper optical confinement layer on a substrate; Remove part of the first MQW multi-quantum well layer, and then grow the second MQW multi-quantum well layer in this area; the energy band gaps of the two multi-quantum well layers are different; then make a heterojunction buried structure; finally in the active area A groove is etched in the heterojunction buried structure on both sides, and a certain thickness of metal layer is set in the groove to introduce additional strain to the active region. The present invention grows two kinds of MQW multi-quantum wells with different energy band gaps as the active layer by adopting the method of butt-butt growth, which can well control the quality of epitaxial growth. , to introduce additional strain to the active region, and then adjust the stress distribution in the active region to achieve the effect of reducing the polarization extinction ratio.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, and in particular relates to a superluminescent light-emitting diode and a manufacturing method thereof. Background technique [0002] Superluminescent Emitting Diode (SLED or SLD) is an optoelectronic device with spontaneous emission and one-way amplification. It has the characteristics of wide spectrum and short coherence. It is used in many fields, such as fiber optic gyroscopes and sensors. The way for superluminescent light-emitting diodes to achieve wide spectrum is mainly in the direction of quantum wells, that is, the quantum wells in the active region along the epitaxial growth direction are composed of materials with different energy band gaps, and the quantum well materials with different energy band gaps achieve different results. gain center wavelength. However, this method of growing quantum wells of different compositions through one-time epitaxy requires multiple s...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/06H01L33/08H01L33/44
CPCH01L33/0045H01L33/0062H01L33/02H01L33/06H01L33/08H01L33/44
Inventor 张明洋王任凡
Owner 武汉敏芯半导体股份有限公司
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