A kind of non-volatile read-only memory and preparation method thereof
A read-only memory, non-volatile technology, applied in static memory, digital memory information, information storage, etc., can solve incompatibility and other problems
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example 1
[0034] Example 1: Demonstration of a single memory device with 1-bit memory
[0035] 1): Select a silicon dioxide / silicon substrate as a substrate, and deposit a layer of 5 nm platinum (Pt) on it as a buffer layer by electron beam deposition.
[0036] Choose a suitable size silica / silicon substrate, clean it, choose a clean utensil, first soak it in deionized water, use an ultrasonic cleaner to clean at maximum power for one minute, take it out and blow it with a nitrogen gun Dry; then soak it in absolute ethanol, use an ultrasonic cleaner to clean it at maximum power for half a minute, take it out and blow it dry with a nitrogen gun; finally soak it in pure acetone, use an ultrasonic cleaner to clean half of it at maximum power minutes, take it out and blow it dry with a nitrogen gun.
[0037] Using an electron beam deposition system, a layer of Pt with a thickness of 5 nm was deposited on the entire substrate, and the vacuum degree of the vacuum chamber was controlled at 10...
example 2
[0046] Example 2: Preparation of non-volatile read-only memory with 1024bit storage space.
[0047] 1): Select a silicon dioxide / silicon substrate as a substrate, and deposit a layer of 5 nm platinum (Pt) on it as a buffer layer by electron beam deposition.
[0048] Choose a suitable size silica / silicon substrate, clean it, choose a clean utensil, first soak it in deionized water, use an ultrasonic cleaner to clean at maximum power for one minute, take it out and blow it with a nitrogen gun Dry; then soak it in absolute ethanol, use an ultrasonic cleaner to clean it at maximum power for half a minute, take it out and blow it dry with a nitrogen gun; finally soak it in pure acetone, use an ultrasonic cleaner to clean half of it at maximum power minutes, take it out and blow it dry with a nitrogen gun.
[0049] Using an electron beam deposition system, a layer of Pt with a thickness of 5 nm was deposited on the entire substrate, and the vacuum degree of the vacuum chamber was c...
example 3
[0059] Example 3: Preparation of non-volatile read-only memory with 1024bit storage space read out by MJT.
[0060] 1): On the silicon dioxide / silicon substrate on which the bottom electrode has been prepared, perform electron beam lithography to open a 32×32 window array. The window size is required to be 120nm×120nm, and the interval between each window is 40nm. A 5 nm layer of platinum (Pt) was then deposited by electron beam lithography as a buffer layer.
[0061] Select a suitable size of silicon dioxide / silicon substrate, which requires that the bottom electrode has been prepared for subsequent testing. To clean the substrate, choose a clean utensil, first soak it in deionized water, use an ultrasonic cleaner for one minute at maximum power, take it out and dry it with a nitrogen gun; then soak it in anhydrous ethanol, Use an ultrasonic cleaner to clean at maximum power for half a minute, take it out and dry it with a nitrogen gun; finally soak it in pure acetone, use a...
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Abstract
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