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Method for forming welding metal layer on device substrate and packaging method

A technology for welding metal and underlying metal layers, which is applied in the manufacturing of electric solid devices, semiconductor devices, and semiconductor/solid state devices, etc. It can solve the problem of easy occurrence of voids in the solder layer, improve roughness and film thickness uniformity, and reduce pollution. The content of the material and the effect of improving the heat dissipation performance

Pending Publication Date: 2021-02-02
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for forming a solder metal layer on a device substrate, so as to optimize the film quality of the solder metal layer, which is beneficial to further improve the problem that voids are prone to appear in the solder layer

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  • Method for forming welding metal layer on device substrate and packaging method
  • Method for forming welding metal layer on device substrate and packaging method
  • Method for forming welding metal layer on device substrate and packaging method

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Embodiment Construction

[0033] As mentioned in the background art, in order to solve the phenomenon of voids in the solder layer, current research directions and improvement ideas are basically aimed at the soldering process.

[0034] Different from the traditional solution, the present invention turns the research direction to the influence of the processing technology of the device substrate on the subsequent welding process. Specifically, the inventors of the present invention have found after a lot of research that the shape of the solder metal layer on the device substrate will also affect the void phenomenon in the solder layer to a certain extent.

[0035] Thus, the present invention provides a method for forming a solder metal layer on a device substrate, for details, please refer to figure 1 As shown, the nickel vanadium layer in the solder metal layer is formed in a nitrogen atmosphere. That is, by improving the film quality of the nickel-vanadium layer, the overall shape of the solder met...

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Abstract

The invention provides a method for forming a welding metal layer on a device substrate and a packaging method. By optimizing the welding metal layer on the device substrate, a content of pollutants in the welding metal layer is reduced, and a welding surface of the welding metal layer is flatter and smoother. Therefore, bonding performance between the welding metal layer and a welding flux in thesubsequent welding process can be effectively improved, and a void ratio in a welding flux layer is reduced so that the heat dissipation performance of the packaging structure of the device can be further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a welding metal layer on a device substrate, a correspondingly formed device substrate with a welding metal layer, and a packaging method. Background technique [0002] In the field of semiconductors, after the components are prepared, they need to be packaged to maintain the electrical properties of the components, etc., and to facilitate the further use of the prepared components. However, in the packaging process, solder is usually used to weld the chip formed with the components to the packaging substrate. Therefore, the welding process will directly affect the welding status between the chip and the packaging substrate. Specifically, during the soldering process, differences in soldering parameters, tooling structures, and accessory structures will affect the shape of the solder after melting and solidification at high temperatures, thereby affect...

Claims

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Application Information

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IPC IPC(8): H01L21/60H01L23/482
CPCH01L24/03H01L23/4827H01L24/83H01L2224/0231
Inventor 邓杨军梁昕陈政徐金辉
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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