Acridine compound and light-emitting device
A technology of light-emitting devices and compounds, which is applied in the field of acridine compounds and light-emitting devices, can solve the problems that the performance of TADF-OLED needs to be improved, and achieve the effect of high triplet energy level.
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[0107] A method for preparing a light-emitting device includes the following steps:
[0108] (1) First, clean the ITO substrate in the following order: 5% KOH solution ultrasonication for 15 minutes, pure water ultrasonication for 15 minutes, isopropanol ultrasonication for 15 minutes, and oven drying for 1 hour.
[0109] (2) Then transfer the substrate to UV-OZONE equipment for surface treatment for 15 minutes, and transfer it to the glove box immediately after the treatment.
[0110] (3) Evaporation and film formation are carried out subsequently: the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, the electron injection layer, and the second electrode are prepared in sequence; -7 Torr, then slowly increase the current value so that the rate slowly increases to After the rate is stable, open the baffle for evaporation.
[0111] (4) Finally, perform UV curing and encapsulation, and then bake at 80°C for 30 minutes.
Embodiment 1~8
[0113] Using compounds M1-M8 as host materials of the light-emitting layer respectively, light-emitting devices 1-8 were prepared according to the structures, raw materials and preparation methods of the above-mentioned light-emitting devices.
[0114] Device performance testing equipment and methods:
[0115] The prepared light-emitting devices 1 to 8 were tested for their luminous performance by the IV-L test system. The machine model of the test system used was F-star CS2000A instrument, and the device performance is shown in Table 2:
[0116] Table 2
[0117] part number Maximum external quantum efficiency [%] 1 18.2% 2 19.1% 3 19.5% 4 17% 5 15% 6 15.5% 7 14.3% 8 13.7%
[0118] From the data in Table 2, it can be seen that using the acridine compound of the present invention as the host material of the light-emitting layer improves the light-emitting efficiency of the device.
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