Photosensitive unit, photosensitive device, driving method and display device

Abstract

The invention discloses a photosensitive unit, a photosensitive device, a driving method and a display device. The photosensitive unit comprises a photosensitive element, a first control circuit and asecond control circuit; wherein the photosensitive element is connected with a first control signal end and a first node respectively, and is configured to respond to a first control signal providedby the first control signal end to reset the potential of the first node in a first time period, receive an optical signal in a second time period and convert the optical signal into an electric signal; the first control circuit is respectively connected with the first node, a first power supply signal end and a second node, and is configured to amplify the electric signal generated by the photosensitive element in response to the potential change of the first node; and the second control circuit is connected with the second node, a second control signal end and a read signal end, and is configured to output the electric signal amplified by the first control circuit to the read signal end in response to a second control signal. The photosensitive unit circuit provided by the invention is simple in structure, and the number of control devices and control signals is reduced.

Description

technical field [0001] This article relates to but not limited to the field of display technology, and in particular relates to a photosensitive unit, a photosensitive device, a driving method and a display device. Background technique [0002] APS (Active Pixel Sensor, active pixel sensor) circuit is commonly used in CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) image sensor design, and can also be applied to the unit circuit design of PIN photoelectric sensing devices, APS circuit is relatively The PPS (Passive Pixel Sensor, Passive Pixel Sensor) circuit has a higher signal amplification capability, so it has a higher anti-noise capability. [0003] In the conventional design of some APS units, a typical APS unit circuit design such as figure 1 As shown, it includes three transistors, a storage capacitor and a photosensitive element (PIN type light emitting diode). figure 1 Among them, the transistor T1 works in a switching state...

AI Technical Summary

Problems solved by technology

[0004] In the APS detection circuit, the APS units are generally distributed in an array, and the APS array includes multiple rows of APS units. Since the APS unit circuit design adopts a 3T (three transistors) pixel structure, the greater the number of transistors, the more photosensitive elements (such as PIN devices) ) The lower the aperture ratio, the smaller the sensing area, so the photocurrent generated by the photosensitive device is also smaller, which affects the performance of the APS detection circuit

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