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Polishing Method of Irregular CdZnTe Wafer

A cadmium zinc telluride wafer and regular technology are applied in the polishing field of irregular cadmium zinc telluride wafers, which can solve the problems of low polishing efficiency of cadmium zinc telluride wafers, and achieve the effects of improving the consistency of polishing effect and improving polishing efficiency.

Active Publication Date: 2022-06-28
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] An embodiment of the present invention provides a method for polishing an irregular CdZnTe wafer to solve the problem of low polishing efficiency of a CdZnTe wafer in the prior art

Method used

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  • Polishing Method of Irregular CdZnTe Wafer

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Embodiment Construction

[0044] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present invention will be more thoroughly understood, and will fully convey the scope of the present invention to those skilled in the art.

[0045] According to the polishing method of irregular cadmium zinc telluride wafer according to the embodiment of the present invention, the polishing method is realized based on polishing equipment, and the polishing equipment includes:

[0046] upper polishing disc;

[0047] a lower polishing disc, which is opposite to the upper polishing disc and arranged at intervals;

[0048] at least one idler plate is located between the...

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Abstract

The invention discloses a polishing method for an irregular cadmium zinc telluride wafer. The polishing method is implemented based on polishing equipment, and the polishing equipment includes: an upper polishing disc and a lower polishing disc arranged oppositely and at intervals; at least one cruiser piece is located between the upper polishing disc and the lower polishing disc, and each cruiser piece is provided with a plurality of through holes , each through hole is suitable for accommodating an irregular cadmium zinc telluride wafer; the driving device is used to control the movement of the cruise ship; the adjustment device is used to adjust the pressure of the upper and lower polishing discs on the irregular cadmium zinc telluride wafer; the polishing method includes : Fix the upper polishing cloth on the side of the upper polishing disc facing the lower polishing disc, and fix the lower polishing cloth on the side of the lower polishing disc facing the upper polishing disc; place a plurality of irregular CdZnTe wafers to be polished after the grinding process in sequence In the through hole of the cruise ship; spray polishing liquid on the upper and lower polishing cloths, set the relevant parameters of the adjustment device, and start the driving device to realize simultaneous polishing of the upper and lower surfaces of multiple wafers.

Description

technical field [0001] The invention relates to the technical field of cadmium zinc telluride polishing, in particular to a polishing method for irregular cadmium zinc telluride wafers. Background technique [0002] Cadmium zinc telluride is a compound semiconductor material of great engineering and strategic significance with excellent optoelectronic properties, and is widely used as a substrate material for mercury cadmium telluride infrared detectors and room temperature nuclear radiation detectors. Cadmium zinc telluride (CdZnTe) substrate is the best substrate material for liquid phase epitaxy of mercury cadmium telluride (HgCdTe) thin films. High-quality CdZnTe wafer surface processing is of particular importance for device performance. The cadmium zinc telluride substrate material is prepared by cutting, chamfering, grinding, polishing, cleaning and other processes of the grown cadmium zinc telluride crystal. The grinding process will introduce a certain damage layer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00B24B29/02
CPCB24B1/00B24B29/02
Inventor 侯晓敏李振兴刘江高张瑛侠吴卿刘铭折伟林
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP