Semiconductor red laser and manufacturing method thereof

Abstract

The invention discloses a semiconductor red laser. An electron blocking layer of the semiconductor red laser is made of a GaInP / AlInP strain superlattice formed by a GaInP material subjected to tensile stress and an AlInP material subjected to compressive stress. The invention also discloses a manufacturing method of the semiconductor red laser. According to the invention, the GaInP / AlInP strain superlattice is adopted to manufacture and form the electron blocking layer, the GaInP is subjected to tensile stress and AlInP is subjected to compressive stress, and the conduction band positions ofthe GaInP subjected to the tensile stress and the AlInP subjected to the compressive stress are higher than those of the AlInP material matched with the lattice, so that the effective conduction bandposition of the microstrip of the combined GaInP / AlInP strain superlattice is higher than that. Therefore, electron limitation is effectively realized, electron leakage in the semiconductor red laseris suppressed, the threshold current of the device is reduced, and the output power of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor and optoelectronic technology, and in particular relates to a semiconductor red laser and a manufacturing method thereof. Background technique [0002] The operating wavelength range of semiconductor red lasers is 620nm to 680nm, which has a wide range of applications in laser display, laser marking, optical pumping and other fields. [0003] A typical semiconductor red laser structure such as figure 1 As shown, it usually uses n-type GaAs substrate, and its epitaxial structure includes n-type AlInP optical confinement layer, n-type AlGaInP waveguide layer, GaInP quantum hydrazine active region, p-type AlGaInP waveguide layer, p-type AlInP optical confinement layer and p type GaAs contact layer. In the structure of the semiconductor red laser, except for the thinner quantum hydrazine, all other layers maintain lattice matching with the GaAs substrate, that is, the stress is zero. [0004] In additi...

AI Technical Summary

Problems solved by technology

However, when the working wavelength is shortened, especially when it is less than 630nm, due to the increase in the energy of the quantum hydrazine conduction band, the conduction bands of the p-type AlGaInP waveguide layer and the p-type AlInP optical confinement layer are not enough to provide better electron confinement, resulting in n A large number of electrons injected into the GaInP quantum hydrazine escape and reach the p-type AlInP optical confinement layer, resulting in a decrease in luminous efficiency and a large amount of Joule heat

Therefore, the shorter the wavelength of the semiconductor red laser, the more serious the electron leakage, the higher the threshold current, the lower the output power, and the lower the efficiency

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