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Sample table suitable for TIC3X three-ion-beam cutting instrument

An ion beam and sample stage technology, applied in circuits, discharge tubes, electrical components, etc., can solve problems such as increased sample processing workload, unfavorable sample integrity, inability to achieve processing, etc. The effect of efficiency

Active Publication Date: 2021-02-23
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the diameter of the part exceeds 1cm, the existing sample stage cannot be used for direct processing, and the sample needs to be destroyed before the next step can be processed, which is not conducive to maintaining the integrity of the sample
In addition, there is a neat rectangular area between the base and the baffle of the existing cross-section processing sample stage. This design requires that the sample to be processed must be pre-polished on both sides, otherwise the processing cannot be realized, which greatly increases the sample size. workload processed

Method used

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  • Sample table suitable for TIC3X three-ion-beam cutting instrument
  • Sample table suitable for TIC3X three-ion-beam cutting instrument
  • Sample table suitable for TIC3X three-ion-beam cutting instrument

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The metal block with a sample thickness of 15 mm is directly processed by cross-sectional ion beam cutting, and it can be seen under the scanning electron microscope that the processing depth exceeds 300 microns.

Embodiment 2

[0055] The metal block with a sample thickness of 25mm is directly cut by the cross-section ion beam, and it can be seen under the scanning electron microscope that the processing depth exceeds 300 microns.

Embodiment 3

[0057] A single-sided flat metal block with a sample thickness of 10mm is directly processed by cross-sectional ion beam cutting, and it can be seen under a scanning electron microscope that the processing depth exceeds 300 microns.

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PUM

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Abstract

The invention provides a sample table suitable for a TIC3X three-ion-beam cutting instrument. The sample table comprises a horizontal displacement device for realizing horizontal movement with a rotary knob, a translation platform arranged on the horizontal displacement device, a to-be-processed sample placing table fixed on the translation platform through a fastening screw, and a sample fixed onthe to-be-processed sample placing table through a double-sided conductive adhesive. The sample table can be used for directly processing the super-large sample.

Description

technical field [0001] The invention provides a sample stage capable of processing super-large samples, and in particular relates to a sample stage suitable for a TIC3X triple ion beam cutter. Background technique [0002] Ion beam cutting technology is a new grinding and polishing sample preparation technology that has emerged in recent years for scanning electron microscopy, electron backscatter diffraction analysis (EBSD) and atomic force microscopy (AFM) analysis. With the development of microstructure characterization methods, a new characterization method, electron backscatter diffraction (EBSD), appeared in the late 1990s, which can obtain the orientation of each grain in the scanning electron microscope image The phase identification of each grain can be carried out, and the content and distribution of each phase in the scanning electron microscope image can be obtained, as well as the texture information. The emergence of this technology has greatly expanded the de...

Claims

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Application Information

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IPC IPC(8): H01J37/20H01J37/32
CPCH01J37/20H01J37/32366
Inventor 林初城曾毅郑维张积梅刘紫微宋雪梅姜彩芬
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI