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Method for screening out defective products of semiconductor components

A component and semiconductor technology, which is applied in the field of screening defective semiconductor components, can solve the problems such as defective products and damages that are difficult to screen out with tiny internal cracks in the glass bulb, and achieves a guaranteed yield rate, high detection efficiency, and avoidance of two problems. secondary damage effect

Pending Publication Date: 2021-02-23
SUZHOU GOODARK ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a screening method for defective semiconductor components. This screening method not only solves the problem that it is difficult to screen out defective products with tiny inner cracks in the glass bulb in the prior art, but also avoids damage to the glass by the screening method. Encapsulated diodes ensure the service life of glass-encapsulated diodes

Method used

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  • Method for screening out defective products of semiconductor components
  • Method for screening out defective products of semiconductor components

Examples

Experimental program
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Embodiment 1

[0025] Embodiment 1: A kind of method for screening out defective products of semiconductor components, referring to the attached figure 2 , the semiconductor component is a glass-sealed diode, and the glass-sealed diode includes a glass bulb 3, a chip 2 and two leads 1 with ends at one end, and the respective ends of the two leads 1 are respectively located at the ports of the glass bulb 3, The other end of the lead 1 extends into the glass bulb 3, the chip 2 inside the glass bulb 3 is located between the two leads 1, and there is a gap 4 between the chip 2 and the glass bulb 3 between the two leads 1, Include the following steps:

[0026] S0: Set the reference electrical value according to the electrical test value of a good-quality glass-encapsulated diode;

[0027] S1: Put the glass-encapsulated diode in an oven and bake for 30 minutes at a temperature of 100°C;

[0028] Wherein, the filling gas in the oven is nitrogen;

[0029] S2: Put the glass-encapsulated diode bak...

Embodiment 2

[0033] Embodiment 2: A kind of method for screening out defective products of semiconductor components, referring to the attached figure 2 , the semiconductor component is a glass-sealed diode, and the glass-sealed diode includes a glass bulb 3, a chip 2 and two leads 1 with ends at one end, and the respective ends of the two leads 1 are respectively located at the ports of the glass bulb 3, The other end of the lead 1 extends into the glass bulb 3, the chip 2 inside the glass bulb 3 is located between the two leads 1, and there is a gap 4 between the chip 2 and the glass bulb 3 between the two leads 1, Include the following steps:

[0034] S0: Set the reference electrical value according to the electrical test value of a good-quality glass-encapsulated diode;

[0035] S1: Put the glass-encapsulated diode in an oven and bake for 40 minutes at a temperature of 110°C;

[0036] Wherein, the filling gas in the oven is nitrogen;

[0037] S2: Put the glass-encapsulated diode bak...

Embodiment 3

[0041] Embodiment 3: A kind of method for screening out defective products of semiconductor components, referring to the attached figure 2 , the semiconductor component is a glass-sealed diode, and the glass-sealed diode includes a glass bulb 3, a chip 2 and two leads 1 with ends at one end, and the respective ends of the two leads 1 are respectively located at the ports of the glass bulb 3, The other end of the lead 1 extends into the glass bulb 3, the chip 2 inside the glass bulb 3 is located between the two leads 1, and there is a gap 4 between the chip 2 and the glass bulb 3 between the two leads 1, Include the following steps:

[0042] S0: Set the reference electrical value according to the electrical test value of a good-quality glass-encapsulated diode;

[0043] S1: Put the glass-encapsulated diode in an oven and bake for 50 minutes at a temperature of 120°C;

[0044] Wherein, the filling gas in the oven is nitrogen;

[0045] S2: Put the glass-encapsulated diode bak...

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Abstract

The invention discloses a method for screening out defective products of semiconductor components, which comprises the following steps of: S0, setting a reference electrical property numerical value according to an electrical property test numerical value of a glass-sealed diode with good quality; S1, putting the glass-sealed diode into a baking oven for baking; S2, putting the glass-sealed diodebaked in the step S1 into water; S3, putting the diode into a soaking basket, completely soaking into a dehydrating agent, lifting up and down, taking out, and draining off the dehydrating agent; S4,blowing off the liquid on the surface of the glass-sealed diode, and carrying out an electrical property test; and S5, comparing the test value with the reference value according to the test result obtained in the step S4, and removing a glass-sealed diode with failure and variable values in the test process. Negative pressure is formed in a gap through the environment temperature difference to suck in moisture, the rapid screening of poor products in a glass bulb is achieved in cooperation with an electrical property test, the screening method is easy to operate, easy to control and high in screening efficiency, meanwhile, the screening method cannot damage the glass-sealed diode, and the quality of the glass-sealed diode is guaranteed.

Description

technical field [0001] The invention relates to a screening method for defective semiconductor components, which belongs to the field of glass-sealed diodes. Background technique [0002] Glass-encapsulated diodes, referred to as glass-encapsulated diodes, are widely used switching diode devices. Generally, glass-encapsulated diodes include Dumet wires and chips packed in a glass bulb. Since the expansion coefficients of the glass bulb and Dumet wire do not completely match, In the process of processing, after assembly, sintering, and electroplating, a small amount of glass bulbs will crack internally. After the glass-sealed diodes with the problem of glass bulb cracking flow out to the market, they will be subjected to cold and heat shocks during power-on and use, and cracks will occur. Further expansion, its sealing performance will gradually decrease, and the reverse leakage will increase, which will eventually lead to the failure of the glass-encapsulated diode. [0003...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/26
Inventor 葛永明毛韦娟许学新许卫岗
Owner SUZHOU GOODARK ELECTRONICS