Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor assembly and manufacturing method thereof

一种制造方法、半导体的技术,应用在半导体/固态器件制造、半导体器件、半导体/固态器件零部件等方向,能够解决电气短路、焊盘破裂、变形等问题,达到缩小间距的效果

Pending Publication Date: 2021-02-23
MEDIATEK INC
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After bonding the solder wire to the pad, applying force to the pad will crack or deform the pad and contact the adjacent pad (causing an electrical short circuit)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor assembly and manufacturing method thereof
  • Semiconductor assembly and manufacturing method thereof
  • Semiconductor assembly and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] refer to Figure 1A to Figure 1C , Figure 1A shows a schematic diagram of a semiconductor assembly 100 according to an embodiment of the present invention, Figure 1B show Figure 1A A top view of the semiconductor assembly 100, Figure 1C shows the engagement in the Figure 1A A schematic diagram of bonding wires on the bonding pads 120 of the semiconductor component 100 . In one embodiment, the semiconductor component 100 may be, for example, a semiconductor substrate, a semiconductor chip, or the like.

[0014] The semiconductor assembly 100 includes a substrate 110 , at least one pad 120 and a passivation layer 130 .

[0015] The substrate 110 includes a base 111 , a plurality of conductive layers 112 , a plurality of dielectric layers 113 and a plurality of conductive vias 114 . The substrate 111 is, for example, a silicon wafer. The conductive layer 112, the dielectric layer 113, and the conductive via 114 are formed on the substrate 111 by using a semiconduc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor assembly and a manufacturing method thereof. The semiconductor assembly includes a substrate and a pad. The pad is on the substrate and has an upper surface anda slot, where the slot is recessed inwardly with respect to the upper surface. The slots are formed in the bonding pads, so that deformation of the bonding pad parts can be accommodated and / or stressof the bonding pads can be reduced or released in the welding process, and the distance between every two adjacent bonding pads can be reduced.

Description

technical field [0001] The present invention relates to a semiconductor component and a manufacturing method thereof, more particularly, to a semiconductor component having a slot and a manufacturing method thereof. Background technique [0002] Conventional semiconductor components include a plurality of bonding pads. Applying a force to the pad after bonding a solder wire to the pad can crack or deform the pad to contact an adjacent pad (causing an electrical short). Contents of the invention [0003] In view of this, the present invention provides a semiconductor component and a manufacturing method thereof to solve the above-mentioned problems or shortcomings of the prior art. [0004] In one embodiment of the present invention, a semiconductor component is provided. A semiconductor component includes a substrate and pads. The pad is on the substrate and has an upper surface and a slot, wherein the slot is inwardly recessed relative to the upper surface. [0005] I...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/11H01L24/13H01L2224/1111H01L2224/1147H01L2224/11622H01L2224/13018H01L2224/02166H01L2224/05155H01L2224/05166H01L2224/05624H01L2224/05644H01L2224/05639H01L2224/05647H01L2224/48453H01L2924/35H01L2224/05557H01L24/48H01L24/03H01L24/05H01L2224/04042H01L2224/03622H01L2224/0361H01L2224/0362H01L2224/03009H01L2224/03618H01L2224/03452H01L2224/0345H01L23/3171H01L2224/85365H01L2224/85201H01L24/85H01L2924/10253H01L2924/01008H01L2924/00014H01L2224/02205H01L2224/0311H01L2224/03614H01L2224/05551H01L2224/05554
Inventor 曹博昭黄裕华
Owner MEDIATEK INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More