GaN HEMT scaling model circuit topological structure
A circuit topology and model technology, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of look-up table range and huge data, discontinuous relationship, difficult to guarantee accuracy, etc., to solve model accuracy and The problem of ductility, meeting the requirements of circuit simulation, and the effect of meeting temperature change characteristics
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[0025]In order to make the technical means realized by the present invention easier to understand, the application will be further described in detail below with reference to the accompanying drawings and embodiments. It is understandable that the specific embodiments described here are only used to explain the related application, but not to limit the application. In addition, it should be noted that, for ease of description, only parts related to the present application are shown in the drawings.
[0026]It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present application will be described in detail with reference to the drawings and in conjunction with embodiments.
[0027]Seefigure 1The present invention provides a GaN HEMT scaling model circuit topology, which is a GaN HEMT (HEMT for high electron mobility transistor) scaling model circuit based on a lookup table mo...
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