GaN HEMT scaling model circuit topological structure

Abstract

The invention discloses a GaN HEMT scaling model circuit topological structure, which is characterized in that a grid electrode G, a source electrode S and a drain electrode D of a transistor GH1 arerespectively connected with positive electrodes of direct-current power supplies VG, VS and VD; a grid electrode G, a source electrode S and a drain electrode D of the transistor GH2 are respectivelyconnected with one end of the inductor L2, one end of the inductor L1 and one end of the inductor L3; the other end of the inductor L2 is connected with the positive electrode of a direct-current power supply Vgs; the other end of the inductor L1 is connected with the negative electrode of the direct-current power supply V0; the other end of the inductor L3 is connected with the positive electrodeof a direct-current power supply Vds; wherein the source electrode S and the drain electrode D of the transistor GH2 are also connected with the two ends of the meter-based current source. Accordingto the GaN HEMT scaling model circuit topological structure disclosed by the invention, the problems of model precision and ductility can be solved, and the temperature change characteristic is met atthe same time, so that higher model precision is achieved, and the circuit simulation requirement is met.

Description

technical field [0001] The invention relates to the technical field of semiconductor device modeling, in particular to a GaN HEMT scaling model circuit topology. Background technique [0002] With the deepening of GaN (gallium nitride) research and the improvement of product technology, the reliability of GaN microwave power devices has been continuously improved, and it has moved from the laboratory to the market and is widely used in civil and national defense fields. [0003] For a fixed feature size (gate length) process, since the total output power of the transistor device is proportional to the total gate width of the device tube, in the design of microwave and millimeter-wave GaN circuits, especially the design of monolithic microwave integrated circuits, the gate of the device model Exponential and unit width scales require an optimal choice to achieve the best circuit performance. Therefore, the modeling method of large-signal scalable models is of great significa...

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Problems solved by technology

[0006] Among them, the look-up table model is based on a large amount of test data and has high precision. However, it is difficult to guarantee the accuracy of the prediction data outside the measurement range. The form of the table is used to store the input and output responses of the transistor and the parameter values ​​and external bias. Corresponding relationship of setting voltage

The advantage of the lookup table model is that it does not need to extract parameters and establish an equivalent circuit, which is intuitive and simple. However, its disadvantages are that these relationships are not continuous and polynomial fitting is required, and transistors beyond the range of the lookup table The characteristics of the model are not guaranteed to be accurate

In addition, LUT models cannot accurately predict transistor characteristics such as temperature variations, frequency shifts, and scaling relationships for different device sizes, and as the characteristics of new semiconductor compound transistors become more complex, the required LUT range and data are too large. Huge, not conducive to simulation

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