Preparation method of silicon-based OLED panel

Abstract

The invention discloses a preparation method of a silicon-based OLED panel. The preparation method comprises the following steps: S1, manufacturing an anode metal layer; S2, conducting gluing and developing to form an R pixel lift off structure; S3, conducting evaporation plating to form an R material and a cathode metal layer; S4, conducting gluing and developing to form a G pixel lift off structure; S5, conducting evaporation plating to form a G material and a cathode metal layer; S6, conducting gluing and developing to form a B pixel lift off structure; S7, conducting evaporation plating toform a B material and a cathode metal layer; S8, stripping a photoresist; S9, conducting gluing to manufacture a flat layer; S10, performing ashing to form a PDL layer; and S11, conducting evaporation plating on a whole-surface common cathode metal layer. According to the preparation method of the silicon-based OLED panel, the self-alignment structure for OLED evaporation plating is prepared by adopting a yellow light process, independent and autonomous luminescence of RGB of PPI 2000 or more can be realized, and the overall display brightness and resolution are greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular, the invention relates to a method for preparing a silicon-based OLED (organic light emitting diode) panel. Background technique [0002] Since the current mainstream production method of OLED panels is vacuum evaporation, and vacuum evaporation must use FMM metal sheet (Fine Metal Mask), its material is mainly a low thermal expansion metal, generally made of Invar metal (invar), Its composition is mainly ferrous alloy containing 36% nickel. Because the thickness of Invar metal used in FMM metal sheets is very thin, its thickness is only about 20-30um, and the production of thin Invar metal is difficult. The etching process limits the physical resolution of OLED to 210-300ppi, and the material is difficult to continue Thinning, at the same time, the physical strength of the thinned material is reduced, the difficulty of FMM production is increased, the yield is low, t...

AI Technical Summary

Problems solved by technology

Because the thickness of Invar metal used in FMM metal sheets is very thin, its thickness is only about 20-30um, and the production of thin Invar metal is difficult. The etching process limits the physical resolution of OLED to 210-300ppi, and the material is difficult to continue Thinning, at the same time, the physical strength of the thinned material is reduced, the difficulty of FMM production is increased, the yield is low, the cost is increased, and the service life of the FMM finished product after stretching the net is reduced

Etching process to produce FMM technology limits the improvement of the resolution of the OLED panel industry

At the same time, silicon-based OLED panels require a PPI of more than 5,000. The existing technology uses a white light plus color film solution to achieve full color, which further reduces the light utilization rate of the overall organic material.

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