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X-waveband ultra-wideband electronic control active frequency selective surface based on PIN diodes, and processing test method thereof

A PIN diode and frequency selective surface technology, applied in the field of radar, can solve the problems of single function of the radome, non-adjustable working state, narrow transmission bandwidth, etc., and achieve a compact direct current feeding structure, good polarization stability, and widen transmission bandwidth Effect

Active Publication Date: 2021-03-02
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the continuous development of technology in the fields of military, industry, and communication in our country, the radome made of traditional passive frequency selective surface (Frequency Selective Surface, FSS) has been unable to adapt to flexible and changeable materials due to its single function and non-adjustable working status. various application scenarios
Compared with the electronically controlled active frequency selective surface (Active Frequency Selective Surface, AFSS) designed in the present invention, the defects of the traditional passive frequency selective surface scheme are as follows: (1) the working state is fixed and the function is single; (2) the transmission bandwidth Narrow, unable to meet ultra-broadband applications; (3) Poor oblique incidence stability, unable to guarantee normal operation under large-angle oblique incidence; (4) Poor polarization stability, unable to achieve dual-polarization work

Method used

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  • X-waveband ultra-wideband electronic control active frequency selective surface based on PIN diodes, and processing test method thereof
  • X-waveband ultra-wideband electronic control active frequency selective surface based on PIN diodes, and processing test method thereof
  • X-waveband ultra-wideband electronic control active frequency selective surface based on PIN diodes, and processing test method thereof

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Experimental program
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Effect test

Embodiment 1

[0049] An X-band ultra-broadband electronically controlled active frequency selective surface based on PIN diodes, the electrically controlled active frequency selective surface unit includes a 3-layer metal plate unit and a 2-layer dielectric plate unit, the 3-layer metal plate unit and 2 The dielectric plate units of the second layer are arranged at intervals, and a circular gap is set in the center of the metal plate unit of the middle layer. The upper metal plate unit is attached to the upper dielectric plate unit, and the bottom metal plate unit is attached to the lower dielectric plate unit. Patch gaps are set, interdigitated capacitance gaps are set in the horizontal direction of the upper metal plate unit, and square gaps are set in the center of the upper metal plate unit;

[0050]The upper metal plate unit has the same structure as the bottom metal plate unit, and the bottom metal plate unit is rotated 90 degrees relative to the upper metal plate unit;

[0051] PIN d...

Embodiment 2

[0074] The structure of the electronically controlled active frequency selective surface unit is as figure 1 As shown, the structure is composed of 3 layers of metal and 2 layers of dielectric. The upper and lower layers of metal are mainly square patch structures, and the middle layer of metal is a circular gap structure. The material of the dielectric plate is RogersRT5880, and the relative permittivity ε r is 2.2, and the thickness h of each layer of dielectric board is 0.508mm. The structure of each metal unit is as follows figure 2 As shown, the metal unit structure of the top layer and the bottom layer are exactly the same, but rotated 90 degrees, and the directions of the PIN diodes loaded on the top layer and the bottom layer are perpendicular to each other. The values ​​of various parameters in the figure are shown in Table 1.

[0075] Table 1 Structural parameters of electronically controlled active frequency selective surface unit

[0076]

[0077]

[0078]...

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Abstract

The invention discloses an X-waveband ultra-wideband electronic control active frequency selective surface based on PIN diodes, and a processing test method thereof. Three layers of metal plate unitsand two layers of dielectric plate units are arranged at intervals, a circular gap is formed in the center of the middle layer metal plate unit, the upper-layer metal plate unit is attached to the upper layer dielectric plate unit, the bottom-layer metal plate unit is attached to the lower-layer dielectric plate unit, and patch gaps are transversely formed in the-upper layer metal plate unit. Theupper-layer metal plate unit is vertically provided with an interdigital capacitor gap, and the center of the upper-layer metal plate unit is provided with a square gap. The upper-layer metal plate unit and the bottom-layer metal plate unit are the same in structure, and the bottom-layer metal plate unit rotates by 90 DEG relative to the upper-layer metal plate unit; and PIN diodes are verticallyarranged on the patch gaps. The performance can be adjusted in real time according to the working state of the antenna system.

Description

technical field [0001] The invention belongs to the field of radar; in particular, it relates to an X-band ultra-broadband electronically controlled active frequency selection surface based on PIN diodes and a processing and testing method thereof. Background technique [0002] With the continuous development of technology in the fields of military, industry, and communication in our country, the radome made of traditional passive frequency selective surface (Frequency Selective Surface, FSS) has been unable to adapt to flexible and changeable materials due to its single function and non-adjustable working status. various application scenarios. Compared with the electronically controlled active frequency selective surface (Active Frequency Selective Surface, AFSS) designed in the present invention, the defects of the traditional passive frequency selective surface scheme are as follows: (1) the working state is fixed and the function is single; (2) the transmission bandwidth...

Claims

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Application Information

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IPC IPC(8): H01Q15/00
CPCH01Q15/002H01Q15/0026
Inventor 傅佳辉赵宇霖王哲飞陈晚张群豪吕博
Owner HARBIN INST OF TECH
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