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Surface treatment agent and method for p-type bismuth telluride-based material used in thermoelectric devices

A surface treatment agent and surface treatment technology, which is applied in the manufacture/treatment of thermoelectric devices, junction lead-out materials of thermoelectric devices, chemical instruments and methods, etc., can solve the problem of increasing production links and production costs, reducing yield and production efficiency , breakage of p-type bismuth telluride-based wafers, etc., to improve the yield and production efficiency, reduce the interface contact resistance and interface contact thermal resistance, and improve the interface bonding strength.

Active Publication Date: 2022-08-02
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional surface treatment method will generate a high-pressure environment during the sandblasting process and a high-temperature environment during the arc spraying process, which will easily cause damage to the p-type bismuth telluride-based wafer, reduce the yield and production efficiency, and increase the production process and Cost of production

Method used

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  • Surface treatment agent and method for p-type bismuth telluride-based material used in thermoelectric devices
  • Surface treatment agent and method for p-type bismuth telluride-based material used in thermoelectric devices
  • Surface treatment agent and method for p-type bismuth telluride-based material used in thermoelectric devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A surface treatment method for p-type bismuth telluride-based material, which comprises the following steps:

[0036] 1) A semi-circular p-type bismuth telluride-based wafer with a diameter of 30 mm and a thickness of 0.3 mm was washed and degreasing with acetone to remove surface contaminants, dehydrated with absolute ethanol, and dried, and the surface roughness was tested with an OLS5000 laser scanning microscope. The degree Sa is 0.197 μm, and then immersed in the roughening solution (the composition of the roughening solution is 10% (volume) of hydrochloric acid, 40% (volume) of hydrogen peroxide, 5% (volume) of nitric acid, and the balance is water), and the roughening temperature is 30 ℃, roughening time 5min;

[0037] 2) Transfer the roughened p-type bismuth telluride-based wafer in step 1) into ash removal liquid (the composition of the ash removal liquid is hydrofluoric acid 50% (volume), hydrochloric acid 10% (volume), nitric acid 5% ( volume), and the remai...

Embodiment 2

[0059] A surface treatment method for p-type bismuth telluride-based material, which comprises the following steps:

[0060] 1) A semicircular p-type bismuth telluride-based wafer with a diameter of 30 mm and a thickness of 0.3 mm was washed and degreased with acetone to remove surface contaminants, dehydrated with anhydrous ethanol, dried, and then used for morphology observation by SEM, and then immersed in a coarsening solution (coarse The composition of the chemical solution is 20% (volume) of hydrochloric acid, 30% (volume) of hydrogen peroxide, 5% (volume) of nitric acid, and the remainder is water), the roughening temperature is 30°C, and the roughening time is 10min;

[0061] 2) The p-type bismuth telluride-based wafer after the roughening in step 1) is transferred into the ash removal liquid (the composition of the ash removal liquid is hydrofluoric acid 40% (volume), hydrochloric acid 10% (volume), nitric acid 5% ( The ash removal treatment was carried out in ash rem...

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Abstract

The invention discloses a surface treatment agent for a p-type bismuth telluride-based material, which comprises two parts: a roughening liquid and a ash removal liquid; 40% hydrogen peroxide, 5-10% nitric acid, the balance is water; the composition of the ash removal liquid includes: 5-50% hydrofluoric acid, 5-20% hydrochloric acid, 5-10% nitric acid, the balance in terms of volume percentage for water. When the surface treatment agent is used, the roughening liquid and the ash removal liquid are used together. The clean p-type bismuth telluride-based wafer is first immersed in the coarsening liquid, and then immersed in the ash removal liquid to complete the pretreatment, and then directly pass the Metallized connections are made by electroplating or electroless plating. The surface treatment agent and method for p-type bismuth telluride-based materials proposed by the present invention avoids the problem of easily causing chip damage when traditional sandblasting-arc spraying processes thin p-type bismuth telluride-based wafers, and at the same time can reduce production links , improve the yield and production efficiency, reduce production costs.

Description

technical field [0001] The invention relates to the field of thermoelectric devices, in particular to a surface treatment agent and a method for p-type bismuth telluride-based materials applied to thermoelectric devices. Background technique [0002] With the improvement of industrial technology level, more and more electronic devices tend to be miniaturized and flexible. As a new energy technology that can realize the direct mutual conversion between thermal energy and electric energy, thermoelectric technology has attracted more and more attention after the current oil crisis. Thermoelectric devices have a series of advantages such as simple structure, no noise, no transmission parts and fast response speed, and can realize two functions of power generation and cooling at the same time. At present, thermoelectric devices also tend to develop in the direction of miniaturization, and are more used in laser communication, electronic industry, biomedicine, aerospace and other...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B33/00C30B29/46C25D5/00C25D5/12C25D7/12C25D3/48C25D3/12C23C28/02C23C18/36H01L35/16H01L35/34C11D7/10C11D7/60C09K13/04
CPCC30B33/10C30B33/00C30B29/46C25D5/00C25D7/12C25D3/48C25D3/12C23C28/023C23C18/36C25D5/12C11D7/10C11D7/105C09K13/04H10N10/852H10N10/01
Inventor 唐新峰唐昊鄢永高张政楷苏贤礼
Owner WUHAN UNIV OF TECH