H-shaped body contact SOI MOSFET device and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductors, and particularly relates to an H-shaped body contact SOI MOSFET device and a manufacturing method of the H-shaped body contact SOI MOSFET device. The device comprises an SOI substrate, an active region located on the SOI substrate, a field oxygen isolation region located on the periphery of the active region, and a field injection region located on the edge of the active region, wherein the active region comprises a source region, a drain region, a P well, an H-shaped gate region and body contact regions, the source region and thedrain region are respectively positioned at the opening of the H-shaped gate region, the P well is positioned between the source region and the drain region, and the body contact regions are positioned at two ends of the H-shaped gate region in the width direction; an injection window is arranged on each body contact region and is defined as a high-concentration injection region, the high-concentration injection region comprises a field injection region, the high-concentration injection region enables the doping concentration at the included angle between the field oxygen isolation region andthe buried oxide layer of the SOI substrate to be greater than the doping concentration of the P well, and by improving the doping concentration at the included angle between the field oxide isolation region and the buried oxide layer of the SOI substrate, the problem of increase of off-state electric leakage of the device is effectively suppressed, and the reliability and engineering applicationlevel of the device are significantly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an H-type body contact SOI MOSFET device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of MOS devices, the isolation technologies used include junction isolation, LOCOS technology, and STI technology. Among them, LOCOS technology and STI technology will introduce parasitic transistor effects. In an ionizing radiation environment, these parasitic transistors will be in the main transistor. A higher leakage current is superimposed on it, which causes a higher off-state current (leakage current) and a threshold voltage drift of the transistor, which reduces the function of the unit circuit or even fails. [0003] Such as figure 1 As shown, it is an H-type MOSFET device. The P-type doping of this structure forms a good ohmic contact in the body region with the source and drain regions. At the same time, the doping concentration...

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Problems solved by technology

[0004] When the H-type MOSFET device is in the ionizing radiation environment, the parasitic transistor will be turned on, which will increase the off-state leakage of the MOS device, seriously affecting the electrical characteristics and reliability

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