Methods and apparatus for high reflectivity aluminum layers
A technology of reflectivity and aluminum layer, applied in coatings, metal material coating processes, lasers, etc., can solve the problems of low reflectivity, reflectivity affecting the performance of image sensors, etc., and achieve the effect of increasing the reflectivity of aluminum
Pending Publication Date: 2021-03-09
APPLIED MATERIALS INC
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However, the inventors have observed that the reflectivity of aluminum deposited on TiN is generally as low as less than 50% over a broad wavelength band.
Low reflectivity adversely affects image sensor performance
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[0021] Methods and apparatus provide a highly reflective aluminum layer on a semiconductor substrate. A cobalt or cobalt alloy underlayer or titanium or titanium alloy underlayer advantageously increases the smoothness of the aluminum layer, which in turn increases reflectivity over a broad wavelength band. Methods and apparatus also provide highly conformal aluminum layers while maintaining increased reflectivity. It is also beneficial to maintain high reflectivity after subsequent semiconductor processes requiring heat treatment.
[0022] The inventors have found that using an underlying layer such as tungsten (W), ruthenium (Ru), or titanium nitride (TiN) yields a reflectivity of less than 50% over a broad wavelength band. Tungsten, ruthenium, and titanium nitride do not provide good underlayers for aluminum deposition, resulting in low reflectivity. The inventors have found that a lower layer of cobalt or cobalt alloy or titanium or titanium alloy provides higher reflect...
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Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for aduration of approximately 60 seconds to approximately 120 seconds.
Description
technical field [0001] Embodiments of the present principles relate generally to semiconductor processing. Background technique [0002] Semiconductors are formed in one or more processing chambers that have the capability to process substrates (eg, semiconductor wafers) in a controlled processing environment. Some processing chambers are used to deposit materials, such as aluminum, on substrates. Aluminum has been incorporated into many different components of semiconductor designs due to its conductive and reflective properties. Image sensors often use aluminum to provide the reflective properties required for the operation of the sensor. Semiconductor processing typically deposits an aluminum layer on a substrate composed of silicon, typically on a titanium nitride (TiN) layer deposited on the substrate. However, the inventors have observed that the reflectivity of aluminum deposited on TiN is generally as low as less than 50% over a broad wavelength band. Low reflect...
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Login to View More IPC IPC(8): H01L21/67H01L21/683H01S3/00H01L21/02H01L21/311
CPCH01L27/1463H01L27/14685H01L27/14698H01L21/76871H01L21/76846H01L21/76843C23C16/0281C23C16/20C23C16/0218H01L21/67276H01L21/67253H01L21/683H01L21/67098H01L21/67248H01L21/67017H01S3/0007H01L21/0228H01L21/31111C23C16/12H01L21/02186H01L21/02658H01L21/0262H01L21/0254H01L21/02271
Inventor 杰奎琳·阮奇吴立其吴湘宁马伯方尚浩·于F·G·瓦西纳诺特诺布尤基·佐佐木
Owner APPLIED MATERIALS INC