Sapphire single crystal growth method

A growth method, sapphire technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high dislocation density, increased crystal, and reduced service life of graphite materials, so as to reduce dislocation density and improve crystal quality, increased stability

Inactive Publication Date: 2021-03-16
通辽精工蓝宝石有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, graphite sublimation will also consume graphite devices, reducing the service life of graphite materials
In summary, the obvious problems of using graphite devices are: reddening of the crystal, the dislocation density of the crystal using the graphite thermal field will be higher than that of the crystal using the tungsten-molybdenum thermal field, and defects such as bubbles and grain boundary clouds in the crystal will also increase.
However, none of these can

Method used

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  • Sapphire single crystal growth method
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  • Sapphire single crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Sapphire single crystal growth equipment, such as figure 1 As shown, it includes a furnace body 1, a crucible 3, a graphite heater 2, a graphite insulation layer 5, a heat exchanger 6, an air inlet pipe 8 and an air outlet pipe 7.

[0038] The furnace body 1 in this embodiment is stainless steel water-cooled, a cavity is provided in the furnace body 1, the graphite heater 2 is installed in the center of the cavity, the crucible 3 is installed in the center of the graphite heater 2, and the graphite insulation layer 5 is enclosed in the graphite heating Outside the container 2, one end of the heat exchanger 6 is installed at the bottom of the crucible 3, and the other end of the heat exchanger 6 protrudes from the bottom wall of the furnace body 1.

[0039] One end of the air inlet pipe 8 passes through the bottom wall of the furnace body 1 and the graphite insulation layer 5 successively, and one end of the gas outlet pipe 7 passes through the top side wall of the furna...

Embodiment 2

[0042] Adopt the sapphire single crystal growth device among the embodiment 1 to grow sapphire single crystal, specifically comprise the following steps:

[0043] (1) 150kg of alumina raw material with a purity of 99.995% or more is steadily filled into the crucible 3 with the seed crystal 4 (sapphire single crystal) stuck, and the crucible 3 is placed on the top of the heat exchanger 6, and the seed crystal is positioned using a positioning device. 4 centers are aligned with heat exchanger 6 centerlines. After cleaning, close the body of furnace 1 and carry out vacuumization degree 10 to the body of furnace 1 -1 Below Pa, start running;

[0044] (2) Vacuum is maintained in the furnace body 1, and the heat exchanger 6 is fed with high-purity helium gas with a purity of more than 99.995%, and the flow rate is 37L / min. At this power level, until the raw material starts to melt;

[0045] (3) After the raw material starts to melt, pass into carrier gas helium, mixed gas carbon ...

Embodiment 3

[0063] Adopt the sapphire single crystal growth device among the embodiment 1 to grow sapphire single crystal, specifically comprise the following steps:

[0064] (1) 150kg of alumina raw material with a purity of 99.995% or more is steadily filled into the crucible 3 with the seed crystal 4 (sapphire single crystal) stuck, and the crucible 3 is placed on the top of the heat exchanger 6, and the seed crystal is positioned using a positioning device. 4 centers are aligned with heat exchanger 6 centerlines. After cleaning, close the body of furnace 1 and carry out vacuumization degree 10 to the body of furnace 1 -1 Below Pa, start running;

[0065] (2) Vacuum is maintained in the furnace body 1, and the heat exchanger 6 is fed with high-purity helium gas with a purity of more than 99.995%, and the flow rate is 37L / min. At this power level, until the raw material starts to melt;

[0066] (3) After the raw material starts to melt, pass into carrier gas helium, carbon monoxide a...

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Abstract

The invention discloses a sapphire single crystal growth method, which relates to the technical field of crystal growth, and comprises the following steps of: (1) putting aluminum oxide into a crucible adhered with seed crystals, putting the crucible on a heat exchanger, closing a furnace body, and vacuumizing or performing positive pressure on the furnace body; (2) introducing helium into the heat exchanger, and starting a graphite heater for heating until the aluminum oxide begins to melt; (3) starting to melt the raw materials, introducing carrier gas and mixed gas from a gas inlet pipeline, and discharging the gas from a gas outlet pipeline; (4) raising the temperature in the furnace body until the aluminum oxide is completely molten, increasing the flow of the heat exchanger after thetemperature is stable, and starting to grow the crystal until the crystal growth is finished; and (5) reducing the temperature in the furnace body to the melting point temperature of the crystal, closing the gas inlet pipeline and the gas outlet pipeline, and taking out the crystal ingot after the furnace body is cooled. The method has the advantages that the crystal quality can be improved, andthe sapphire single crystal with higher quality can be grown when the pressure of the furnace body is maintained at negative pressure or positive pressure during crystal growth.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a method for growing a sapphire single crystal. Background technique [0002] At present, in the field of crystal growth, especially in the field of high-temperature crystal growth, tungsten-molybdenum refractory metals or graphite are mainly used as heating elements and insulation materials. However, with the development of technology, although refractory metals have high melting points and strong corrosion resistance, processing The process is simple and the production cost is low, but in practical applications, the loss of tungsten and molybdenum materials in crystal growth is very serious, and the service life is less than one tenth of that of graphite materials. At the same time, the deformation of tungsten and molybdenum at high temperatures will cause heat loss. The uneven temperature field will lead to cracking of the crystal crucible, etc., which will increase the...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B27/00
CPCC30B29/20C30B27/00
Inventor 郭飞刘旭东
Owner 通辽精工蓝宝石有限公司
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