Semiconductor structure processing method and semiconductor structure
A processing method and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve problems such as easy cracking of the silicon nitride layer, unstable connection between the silicon nitride layer and the gallium arsenide, and achieve Increased adhesion properties, good peeling and breaking effects
Active Publication Date: 2021-03-16
度亘核芯光电技术(苏州)有限公司
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[0004] The purpose of the present invention is to provide a semiconductor structure processing method and a semiconductor structure, so as to alleviate the technical problems that the connection between the silicon nitride layer and the gallium arsenide part is unstable in the existing semiconductor structure, and the silicon nitride layer is prone to breakage
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[0050] The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0051] The processing method of the semiconductor structure provided by the embodiment of the present invention includes the following steps:
[0052] S1 . Form a stacked structure including the GaAs part 110 and the AlGaAs part 120 , wherein the GaAs part 110 is located above the AlGaAs part 120 .
[0053] The stacked structure of the GaAs part 110 and the AlGaAs part 120 is the main structure of the semiconductor structure.
[0054] S2. Forming a reticle 200 on the upper surface of the stacked structure, the reticle 2...
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The invention provides a semiconductor structure processing method and a semiconductor structure, and relates to the technical field of semiconductor structure processing, and the processing method comprises the following steps: forming a laminated structure comprising a gallium arsenide part and an aluminum-gallium-arsenic part; forming a mask plate on the upper surface of the laminated structure; etching the gallium arsenide part by using an alkaline solution, and forming an upper groove penetrating through the gallium arsenide part in the gallium arsenide part; etching the aluminum-gallium-arsenic part in a plasma etching mode, and forming a middle groove communicated with the upper groove in the aluminum-gallium-arsenic part; forming a first-stage side wall structure on the circumferential side wall of the middle groove, wherein an opening is formed in the bottom of the first-stage side wall structure, the bottom face of the middle groove is etched in a plasma etching mode with thefirst-stage side wall structure as a mask, and therefore a lower groove is formed; bombarding the upper surface of the gallium arsenide part by using plasma; and forming secondary silicon nitride layers on the upper surface of the gallium arsenide part and the side wall and the bottom surface of the total tank body in an atomic layer deposition mode.
Description
technical field [0001] The invention relates to the technical field of semiconductor structure processing, in particular to a semiconductor structure processing method and the semiconductor structure. Background technique [0002] like figure 1 As shown, in the preparation of GaAs / AlGaAs stacked semiconductor wafers, wet etching is used to form grooves in the GaAs part 110 and the AlGaAs part 120, and then use A silicon nitride (SiNx) film 130 is formed on the surface of the semiconductor and the inner wall of the groove by a vapor deposition method. [0003] However, the etched GaAs layer will have a sharp corner structure 140 protruding toward the center at its opening, and the opening of the GaAs layer will gradually increase from top to bottom, and the SiNx film attached to the inner wall of the sharp corner structure will not get stable support Therefore, the connection strength between the SiNx film attached to the inner wall of the sharp-angle structure and the GaAs...
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IPC IPC(8): H01L21/306H01L21/321H01L21/3213H01L21/02
CPCH01L21/02458H01L21/30604H01L21/3065H01L21/3211H01L21/32134H01L21/32136
Inventor 白龙刚于良成张松涛苏朋杨国文
Owner 度亘核芯光电技术(苏州)有限公司