Sputtering apparatus and sputtering apparatus control method

Abstract

The invention relates to a sputtering apparatus and a sputtering apparatus control method. The sputtering apparatus comprising: a support part for supporting a substrate; a target spaced apart from the support part with the horizontal direction as the datum; an intermediate magnet for adjusting the plasma intensity of an intermediate region which is disposed between the substrate and the target; an upper magnet for adjusting the plasma intensity of an upper region which is disposed on the upper side of the intermediate region; a lower magnet for adjusting the plasma intensity of a lower regionwhich is disposed on the lower side of the intermediate region; an intermediate acquisition module used for measuring and acquiring an intermediate plasma value of the intermediate region; an upper acquisition module used for measuring and acquiring an upper plasma value of the upper region; a lower acquisition module used for measuring and acquiring a lower plasma value of the lower region; an intermediate moving mechanism moving the intermediate magnet in the horizontal direction; an upper moving mechanism independently moving the upper magnet in the horizontal direction; and a lower movingmechanism independently moving the lower magnet in the horizontal direction.

Description

technical field [0001] The invention relates to a sputtering device and a control method of the sputtering device for performing a sputtering process such as an evaporation process on a substrate. Background technique [0002] Generally, in order to manufacture a display device, a solar cell (Solar Cell), a semiconductor device, etc., a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a substrate. For this purpose, the substrate is subjected to a treatment process, for example, an evaporation process for evaporating a thin film of a specific material on the substrate, a photolithography process for selectively exposing the thin film using a photosensitive material, removing the selectively exposed part of the thin film to Etching process for patterning etc. [0003] As such, a sputtering device is used as a facility for processing a substrate. The sputtering device mainly implements the evaporation process of evaporating...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem in the sputtering apparatus related to the prior art in that the remaining usable portion cannot use

Therefore, in the sputtering apparatus related to the prior art, as the total usage of the target decreases, the service life of the target decreases, and thus the process cost increases due to the replacement of the target and the like.

In addition, as the sputtering apparatus related to the prior art shortens the replacement cycle of the target, the time to stop the overall process due to the replacement of the target increases, and thus the substrate that completes the sputtering process due to the reduced operating rate reduced production efficiency

[0007]Second, due to the intensity of plasma generated between the upper region, the middle region and the lower region of the sputtering device involved in the prior art difference, the evaporation rate of the film will occur between the upper part of the substrate corresponding to the upper region, the middle part of the substrate corresponding to the middle region, and the lower part of the substrate corresponding to the lower region difference

Therefore, the sputtering device related to the prior art has the problem that the uniformity of the thin film deposited on the substrate is reduced, and the quality of the substrate after the sputtering process is reduced.

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