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Three-dimensional multi-channel power splitter and preparation method for silicon-based radio frequency transceiver microsystem

A technology of radio frequency transceiver and power splitter, which is applied in the direction of waveguide devices, circuits, connecting devices, etc. It can solve the problems of large return loss, large difference in the size of the transmission line of the two branches, and difficulty in controlling the phase of the three branches. problem, to achieve the effect of small return loss, simple structure and high processing precision

Active Publication Date: 2021-08-27
浙江集迈科微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the unequal power division of this planar multi-stage power splitter, the size of the transmission line of the two splits is quite different, and it is easy to cause the problem of large return loss due to the three-dimensional structure dissimilarity, and the cascaded first The second-order one-to-two power divider is easy to cause the problem that the phase between the three branches is difficult to control

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  • Three-dimensional multi-channel power splitter and preparation method for silicon-based radio frequency transceiver microsystem
  • Three-dimensional multi-channel power splitter and preparation method for silicon-based radio frequency transceiver microsystem
  • Three-dimensional multi-channel power splitter and preparation method for silicon-based radio frequency transceiver microsystem

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Embodiment Construction

[0061] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0062] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides a three-dimensional multi-channel power divider for silicon-based radio frequency transceiver microsystems and a preparation method thereof. The power divider includes a silicon substrate, a TSV conductive column, a ground metal wiring layer, a dielectric layer, a first metal layer, an isolation The resistance layer and the second metal layer; the first transmission structure and the second transmission structure are made into a vertical interconnection structure in the silicon substrate to prepare a three-dimensional multi-channel power splitter. The jumper problem when connecting the isolation resistor in the channel transmission structure, and based on the silicon-based stacking technology, can greatly improve the integration level, so that the present invention can provide a circuit with equal phase, small return loss, simple structure, high processing accuracy, and good quality. 3D multi-channel power splitter.

Description

technical field [0001] The invention relates to the field of semiconductor packaging, in particular to a three-dimensional multi-channel power splitter and a preparation method for a silicon-based radio frequency transceiver microsystem. Background technique [0002] With the development of silicon-based processing technology and radio frequency signal transceiver microsystem (RF TR System), in heterogeneous microsystems, the use of silicon-based technology to integrate three-dimensional passive devices has become an important direction for the development of next-generation military highly integrated electronic system technology. Silicon-based integrated three-dimensional passive devices are passive devices with different structures (including resistors, capacitors, inductors, antennas, power splitters, etc.) Devices, couplers, etc.) are fabricated directly on the silicon-based interposer. [0003] As a device that divides the signal power into multiple parts, the power sp...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P5/16H01P11/00
CPCH01P5/16H01P11/00
Inventor 郭西冯光建黄雷高群顾毛毛
Owner 浙江集迈科微电子有限公司