Reticular radio frequency PECVD electrode structure and application method thereof
A technology of mesh electrode and electrode structure, applied in gaseous chemical plating, coating, metal material coating process, etc., can solve the problem of poor uniformity of amorphous silicon film, improve coating effect, improve conversion efficiency and product quality Yield, Effect of Solving Edge Effects and Potential Standing Wave Effects
Pending Publication Date: 2021-03-30
SUZHOU AIKANG LOW CARBON TECH INST +1
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Problems solved by technology
[0006] The object of the present invention is to overcome above-mentioned deficiencies, provide a kind of mesh radio frequency PECVD electrode structure, be used for solving the poor uniformity problem of the amorphous silicon thin film caused by edge effect and potential standing wave effect in HJT battery PECVD process, through Using a mesh electrode structure combined with multi-point feeding technology to simultaneously solve the influence of the edge effect of the RF PECVD process chamber and the potential standing wave effect on the uniformity of the electromagnetic field
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Embodiment 1
[0027] see figure 1 , a kind of mesh radio frequency PECVD electrode structure that the present invention relates to, it comprises mesh electrode plate 1 body, and described mesh electrode plate 1 adopts the frame design of 9*12, and length is 1.95m, and width is 1.60m, and inner The diameter of the net frame is 5cm, and the diameter of the outer net frame is 7cm.
[0028] An RF power feed point 2 is set every four grids in the horizontal direction, and an RF power feed point 2 is set every three grids in the vertical direction. This multi-point feeding scheme is equivalent to dividing the mesh electrode plate 1 into nine small blocks of equal size, and applying RF power to these small block areas can greatly reduce the influence of the potential standing wave effect. At the same time, compared with the trapezoidal electrode, this screen frame design can reduce the impact of lateral edge effects on the uniformity of the coating.
[0029] see figure 2 , the application meth...
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Abstract
The invention relates to a reticular radio frequency PECVD electrode structure. The reticular radio frequency PECVD electrode structure comprises a reticular electrode plate (1) body, the reticular electrode plate (1) adopts a 9 * 12 screen frame structure, an RF power feed point (2) is arranged every four grids in the transverse direction, an RF power feed point (2) is arranged every three gridsin the longitudinal direction, the length of the net-shaped electrode plate (1) is 1.95 meters, the width of the net-shaped electrode plate (1) is 1.60 meters, the diameter of an inner net frame of the net-shaped electrode plate (1) is 5 centimeters, and the diameter of an outer net frame is 7 centimeters. According to the reticular radio frequency PECVD electrode structure and the application method thereof, a reticular electrode structure is used, the influence of the fringe effect and the potential standing wave effect of a radio frequency PECVD process cavity on the uniformity of an electromagnetic field is solved, the coating effect of amorphous silicon is improved, the conversion efficiency and the product yield of a solar cell are improved, and the stable process is more suitable for mass production.
Description
technical field [0001] The invention relates to the technical field of high-efficiency battery manufacturing in the photovoltaic industry, in particular to a mesh radio frequency PECVD electrode structure and an application method thereof. Background technique [0002] With the wide application of solar energy, the solar photovoltaic panel industry is also booming. High-silicon-based heterojunction (HJT) cells are the third-generation solar cells with the most development potential after high-efficiency PERC. They have high conversion efficiency, high open circuit voltage, and low temperature. Coefficient, no light-induced attenuation (LID), no electric attenuation (PID), low process temperature, high double-sided rate, etc., for my country's goal of "reaching the carbon peak in 2030 and achieving carbon neutrality in 2060" is of great significance. [0003] As a key process of HJT cells, PECVD can prepare amorphous silicon thin films to form a built-in electric field, thereb...
Claims
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Login to View More IPC IPC(8): C23C16/509C23C16/24
CPCC23C16/5096C23C16/24
Inventor 张超雄王铭汪涛凌俊郭小勇易治凯
Owner SUZHOU AIKANG LOW CARBON TECH INST