A crimping type igbt chip dynamic characteristic experiment platform and measurement method

Abstract

The invention relates to a crimping type IGBT chip dynamic characteristic experiment platform and a measuring method, comprising: a pressure fixture, a pressure device, a pressure sensor, a pressure equalization device, first and second epoxy resin plates, a crimping type IGBT chip, Heating plate, disc spring, laminated busbar, busbar capacitor, load inductance, freewheeling diode, DC voltage source, drive pulse generator, current and voltage measuring device; busbar capacitor with DC voltage source; laminated busbar with DC voltage Source and freewheeling diodes; freewheeling diodes connected to press-fit IGBT chips; load inductor continuous flow diodes; drive pulse generators connected to press-fit IGBT chips; press-fit IGBT chips connected to DC voltage sources; disc springs, first epoxy The resin plate, the heating plate, the crimping type IGBT chip, the second epoxy resin plate, the pressure equalization device, the pressure sensor, and the pressure applying device are stacked sequentially from bottom to top; the pressure fixture fixes the laminated structure. The invention can measure the dynamic characteristics of the crimping type IGBT chip under the comprehensive influence of electricity-heat-force.

Description

technical field [0001] The invention relates to the field of measurement of power electronics technology, in particular to an experimental platform and a measurement method for the dynamic characteristics of a crimping type IGBT chip. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) has become the mainstream of power semiconductor devices after decades of development since it was invented in the 1980s, occupying a very important position in the field of power conversion. [0003] Compared with the traditional soldered IGBT module, the crimped IGBT device relies on mechanical pressure to connect the internal IGBT chips in parallel, canceling the bonding wire connection commonly used in the soldered IGBT module, so that it has double-sided heat dissipation and short-circuit failure. , high power density and other advantages, it has been widely used in the field of high voltage and high power. Although the press-fit IGBT device has many advantages, it als...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a crimping type IGBT chip dynamic characteristic experiment platform and measurement method, to solve the existing crimping type IGBT chip characteristic experiment platform lacks the ability to measure the dynamic characteristics of the chip and the lack of comprehensive influence on electricity, heat and force considerations

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