Crimping type IGBT chip dynamic characteristic experiment platform and measurement method

Abstract

The invention relates to a crimping type IGBT chip dynamic characteristic experiment platform and a measurement method, and the platform comprises a pressure clamp, a pressure applying device, a pressure sensor, a pressure balancing device, a first epoxy resin plate, a second epoxy resin plate, a crimping type IGBT chip, a heating plate, a disc spring, a laminated busbar, a bus capacitor, a load inductor, a fly-wheel diode, a DC voltage source, a drive pulse generator, and a current and voltage measuring device; the bus capacitor is connected with a direct-current voltage source; the laminated busbar is connected with a direct-current voltage source and a fly-wheel diode; the fly-wheel diode is connected with the crimping type IGBT chip; the load inductor is connected with thefly-wheel diode; the driving pulse generator is connected with the crimping type IGBT chip; the crimping type IGBT chip is connected with a direct-current voltage source; the disc spring, the first epoxy resin plate, the heating plate, the crimping type IGBT chip, the second epoxy resin plate, the pressure balancing device, the pressure sensor and the pressure applying device are stacked in sequence from bottom to top; and the pressure clamp fixes the laminated structure. According to the invention, the dynamic characteristics of the crimping type IGBT chip under the comprehensive influence of the electric heating force can be measured.

Description

technical field [0001] The invention relates to the field of measurement of power electronics technology, in particular to an experimental platform and a measurement method for the dynamic characteristics of a crimping type IGBT chip. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) has become the mainstream of power semiconductor devices after decades of development since it was invented in the 1980s, occupying a very important position in the field of power conversion. [0003] Compared with the traditional soldered IGBT module, the crimped IGBT device relies on mechanical pressure to connect the internal IGBT chips in parallel, canceling the bonding wire connection commonly used in the soldered IGBT module, so that it has double-sided heat dissipation and short-circuit failure. , high power density and other advantages, it has been widely used in the field of high voltage and high power. Although the press-fit IGBT device has many advantages, it als...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a crimping type IGBT chip dynamic characteristic experiment platform and measurement method, to solve the existing crimping type IGBT chip characteristic experiment platform lacks the ability to measure the dynamic characteristics of the chip and the lack of comprehensive influence on electricity, heat and force considerations

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