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a light emitting diode

A technology of light-emitting diodes and external electrodes, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as excessive void area, achieve the effects of improving mechanical properties, improving the uniformity of thermal diffusion, and improving uniformity

Active Publication Date: 2022-05-10
纳微朗科技(深圳)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, the present application provides a light-emitting diode, which can solve the technical problems caused by the excessively large cavity area in the prior art, improve the push-pull force level after welding the light-emitting diode and the package bracket, and improve the mechanical properties of the light-emitting diode package product

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Embodiment Construction

[0012] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0013] The terms "first", "second", "third", "fourth", etc. (if any) in the description and claims of this application and the above drawings are used to distinguish similar objects and not necessarily Describe a specific order or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein can be practiced in sequences other than those illustrated or described herein. Furthe...

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Abstract

This application relates to the field of semiconductor technology, and specifically discloses a light-emitting diode, which includes: a light-emitting diode including: a substrate, an epitaxial layer, a first passivation layer, and an internal electrode layer. The first passivation layer is provided with a second Grooving, the second internal electrode region is electrically connected to the second semiconductor layer through the second groove; wherein, the number of second grooves corresponding to each second internal electrode region is greater than or equal to 2, and are arranged at intervals from each other. Through the above method, the present application can solve the technical problems caused by the excessively large cavity area in the prior art, improve the push-pull force level after welding the light-emitting diode and the package bracket, and improve the mechanical properties of the light-emitting diode package product; on the other hand, the present application The uniformity of current diffusion and thermal diffusion of light-emitting diode products can be improved, thereby improving the photoelectric performance and application reliability of light-emitting diode products.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a light emitting diode. Background technique [0002] In a conventional flip-chip light emitting diode, an N electrode and a P electrode are sequentially stacked on one side of the passivation layer, wherein a concave surface is formed on the surface of the P electrode. [0003] In the long-term research process, the inventors of the present application found that during the packaging process of the above-mentioned flip-chip light-emitting diodes, the solder material tends to produce cavities at the concave surface of the P electrode, resulting in a decrease in the push-pull force after the light-emitting diode and the package bracket are welded, affecting The reliability of the light-emitting diode packaging structure; in addition, the larger the cavity area, the smaller the current injection area, the worse the current injection uniformity, and the worse the he...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/44
CPCH01L33/387H01L33/382H01L33/44
Inventor 颜改革蒋振宇闫春辉
Owner 纳微朗科技(深圳)有限公司
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